BSC011N03LSIATMA1 vs BSC027N04LSGATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng BSC011N03LSIATMA1 sa pamamagitan ng Infineon at BSC027N04LSGATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro BSC011N03LSIATMA1 BSC027N04LSGATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS™ 30 V OptiMOS 3
Channel Type N-Channel —
Drain-to-Source Voltage (VDS) 30 V —
Gate-to-Source Voltage (VGS) ±20 V —
Continuous Drain Current (ID) at TA=25°C 37 A —
Continuous Drain Current (ID) at TC=25°C 100 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed IDM value] [DATA_NEEDED: pulsed drain current]
On-State Resistance RDS(on) at VGS=10V 1.1 mΩ (typical) —
Power Dissipation at TA=25°C 2.5 W —
Power Dissipation at TC=25°C 96 W —
Temperature ng Junction na Operasyon -55 °C to +150 °C —
Packhaging PG-TDSON-8-7 (Surface Mount) PG-TDSON-8-1 (SuperSO8 5x6)
Uri ng Pagpapasok Surface Mount Surface Mount
Level ng MSL 1 (per JEDEC J-STD-020) 1
Tindminan RoHS Compliant Compliant
Uri ng Transistor — N-Channel MOSFET
Drain-Source Voltage (VDS) — 40 V
Gate-Source Voltage (VGS) max — ±20 V
Continuous Drain Current (ID) at Ta=25°C — 24 A
Continuous Drain Current (ID) at Tc=25°C — 100 A
On-Resistance RDS(on) max @ VGS=10V — 2.7 mΩ
Power Dissipation (Ta=25°C) — 2.5 W
Pwersang Pinahihigpit (TC=25°C) — 83 W
Hanay ng Temperature na Operasyon — -55°C to +150°C
Technology — OptiMOS 3 (Trench)
Wala sa Halogen — Yes

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