BSC019N08NS5ATMA1 vs BSC076N04NDATMA1 Comparison

Detailed side-by-side comparison of BSC019N08NS5ATMA1 by Infineon and BSC076N04NDATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter BSC019N08NS5ATMA1 BSC076N04NDATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Manufacturer Infineon Technologies Infineon Technologies
Technology OptiMOS 5 (N-channel trench) Trench MOSFET (OptiMOS 3)
Polarity N-Channel —
Drain-Source Voltage (VDS) max 80 V 40 V
Gate-Source Voltage (VGS) max ±20 V —
Continuous Drain Current (ID) at TA=25C 28 A —
Continuous Drain Current (ID) at TC=25C 237 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current value] —
On-Resistance RDS(on) max at VGS=10V 1.9 mOhm —
Gate Threshold Voltage VGS(th) typ 3.0 V —
Total Gate Charge Qg [DATA_NEEDED: total gate charge Qg] —
Power Dissipation (TA=25C) 3 W —
Power Dissipation (TC=25C) 214 W —
Operating Temperature Range -55 C to +150 C —
Package PG-TSON-8-3 (SuperSO8 5x6 mm) —
Mounting Type Surface Mount Surface Mount
MSL Level 1 —
RoHS Status Compliant —
Avalanche Rated Yes —
Series — OptiMOS 3
Configuration — Dual N-Channel (independent MOSFETs)
Continuous Drain Current (ID) — 20 A (Tc)
Gate Threshold Voltage (VGS(th)) — 4 V (max, typical)
On-Resistance RDS(on) max — 7.6 mOhm
Power Dissipation (Ta) — 2.3 W
Power Dissipation (Tc) — 65 W
Qgd/Qgs Ratio — < 0.8 (high shot-through immunity)
Operating Junction Temperature — -55 C to +175 C
Package / Case — PG-TDSON-8-4 (SuperSO8, 5x6 mm)
RoHS / Pb-Free — Compliant (Pb-free plating)
FET Type — 2x N-Channel MOSFET array

Datasheets & Resources

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