BSC020N03LSGATMA1 vs IQE008N03LM5ATMA1 तुलना
विस्तृत दोनों ओर की तुलना BSC020N03LSGATMA1 द्वारा Infineon और IQE008N03LM5ATMA1 द्वारा Infineon. मुख्य विशेषताओं, इलेक्ट्रिकल पैरामीटर, पैकेजिंग, चक्र स्थिति, मूल्यांकन और उपलब्धता को तुलना करके अपनी डिजाइन की आवश्यकताओं के लिए सबसे अच्छा घटक निर्धारित करें。
Infineon
BSC020N03LSGATMA1 - 30V N-Channel OptiMOS 3, 100A TDSON-8 | Infineon
BSC020N03LSGATMA1 ✓ सक्रियविशेषता तुलना
| पैरामीटर | BSC020N03LSGATMA1 | IQE008N03LM5ATMA1 |
|---|---|---|
| ब्रांड | Infineon | Infineon |
| श्रेणी | MOSFETs | MOSFETs |
| लाइफसाइकिल स्थिति | सक्रिय | सक्रिय |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 3 | — |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current (ID) at Ta=25C | 28 A | — |
| Continuous Drain Current (ID) at Tc=25C | 100 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current value] | — |
| Gate-Source Voltage (VGS) | +/-20 V | — |
| Gate Threshold Voltage (VGS(th)) | 1 V to 2.2 V (typical range, per datasheet) | 2 V (at 250 µA per LCSC snippet) |
| On-State Resistance (RDS(on)) at VGS=10V | approximately 2.0 mOhm | — |
| Power Dissipation (PD) at Ta=25C | 2.5 W | — |
| Power Dissipation (PD) at Tc=25C | 96 W | — |
| ऑपरेटिंग तापमान रेंज | -55 C to +150 C (junction) | -55°C to +150°C (typical MOSFET junction rating) |
| पैकेज / केस | PG-TDSON-8-1 (TDSON EP, 5 mm x 6 mm) | — |
| माउंटिंग प्रकार | Surface Mount | Surface Mount |
| Packaging | Tape & Reel | — |
| RoHS स्थिति | Compliant | Compliant (per LCSC listing) |
| MSL स्तर | 1 (per JEDEC J-STD-020, per Infineon datasheet) | [DATA_NEEDED: MSL level] |
| Product Family | — | OptiMOS 5 |
| Polarity / Channel Type | — | N-Channel |
| Drain-Source Voltage (VDS) Max | — | 30 V |
| Continuous Drain Current (ID) at TA=25°C | — | 27 A |
| Continuous Drain Current (ID) at TC=25°C | — | 253 A |
| On-Resistance RDS(on) Typical | — | 0.85 mΩ (at 20 A, VGS=10 V per LCSC datasheet snippet) |
| Power Dissipation at TA=25°C | — | 2.1 W |
| Power Dissipation at TC=25°C | — | 89 W |
| पैकेज | — | PG-TSON-8-4 (3.3 x 3.3 mm), Source-Down |
| Gate-Source Voltage (VGS) Max | — | ±20 V (typical MOSFET rating) |
| Technology | — | OptiMOS 5, Source-Down |