BSC020N03LSGATMA1 vs IQE008N03LM5ATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC020N03LSGATMA1 disebabkan oleh Infineon dan IQE008N03LM5ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
BSC020N03LSGATMA1 - 30V N-Channel OptiMOS 3, 100A TDSON-8 | Infineon
BSC020N03LSGATMA1 ✓ AktifPengandingan Spesifikasi
| Parametr | BSC020N03LSGATMA1 | IQE008N03LM5ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 3 | — |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current (ID) at Ta=25C | 28 A | — |
| Continuous Drain Current (ID) at Tc=25C | 100 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current value] | — |
| Gate-Source Voltage (VGS) | +/-20 V | — |
| Gate Threshold Voltage (VGS(th)) | 1 V to 2.2 V (typical range, per datasheet) | 2 V (at 250 µA per LCSC snippet) |
| On-State Resistance (RDS(on)) at VGS=10V | approximately 2.0 mOhm | — |
| Power Dissipation (PD) at Ta=25C | 2.5 W | — |
| Power Dissipation (PD) at Tc=25C | 96 W | — |
| Gambaran Suhu Operasi | -55 C to +150 C (junction) | -55°C to +150°C (typical MOSFET junction rating) |
| Kemasan / Case | PG-TDSON-8-1 (TDSON EP, 5 mm x 6 mm) | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Packaging | Tape & Reel | — |
| Status RoHS | Compliant | Compliant (per LCSC listing) |
| Aras MSL | 1 (per JEDEC J-STD-020, per Infineon datasheet) | [DATA_NEEDED: MSL level] |
| Product Family | — | OptiMOS 5 |
| Polarity / Channel Type | — | N-Channel |
| Drain-Source Voltage (VDS) Max | — | 30 V |
| Continuous Drain Current (ID) at TA=25°C | — | 27 A |
| Continuous Drain Current (ID) at TC=25°C | — | 253 A |
| On-Resistance RDS(on) Typical | — | 0.85 mΩ (at 20 A, VGS=10 V per LCSC datasheet snippet) |
| Power Dissipation at TA=25°C | — | 2.1 W |
| Power Dissipation at TC=25°C | — | 89 W |
| Kemasan | — | PG-TSON-8-4 (3.3 x 3.3 mm), Source-Down |
| Gate-Source Voltage (VGS) Max | — | ±20 V (typical MOSFET rating) |
| Technology | — | OptiMOS 5, Source-Down |