BSC022N04LS6ATMA1 vs BSC023N08NS5SCATMA1 Comparison

Detailed side-by-side comparison of BSC022N04LS6ATMA1 by Infineon and BSC023N08NS5SCATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSC022N04LS6ATMA1 BSC022N04LS6ATMA1 - 40V 2.2mOhm OptiMOS 6 N-Ch MOSFET | Infineon

BSC022N04LS6ATMA1 - 40V 2.2mOhm OptiMOS 6 N-Ch MOSFET | Infineon

BSC022N04LS6ATMA1 βœ“ Active

Specification Comparison

Parameter BSC022N04LS6ATMA1 BSC023N08NS5SCATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.66 $1.05
Manufacturer Infineon Technologies Infineon Technologies
Technology OptiMOSβ„’ 6 (N-channel trench) OptiMOS 5 (N-channel trench MOSFET)
Drain-Source Voltage (VDS) 40 V 80 V
Continuous Drain Current (ID) at Ta 27 A β€”
Continuous Drain Current (ID) at Tc 100 A β€”
Maximum Pulsed Drain Current (IDM) 139 A β€”
On-Resistance RDS(on) max 2.2 mOhm at VGS=10 V β€”
Power Dissipation (Ta) 3 W β€”
Power Dissipation (Tc) 79 W β€”
Package SuperSO8 5x6 (PG-TDSON-8-1) PG-WSON-8-2 (SuperSO8 DSC)
Mounting Type Surface Mount Surface Mount
Channel Type N-Channel β€”
Pin Count 8 β€”
Operating Temperature -55 C to +175 C (junction) β€”
RoHS Status Compliant Compliant
Part Number β€” BSC023N08NS5SCATMA1
Continuous Drain Current (ID, Tc=25Β°C) β€” 202 A
Power Dissipation (PD, Tc=25Β°C) β€” 188 W
On-State Resistance RDS(on) typ. β€” 2.3 mΞ© at VGS=10 V, ID=50 A
Gate Threshold Voltage VGS(th) typ. β€” 3.8 V
Total Gate Charge Qg β€” 98 nC at VGS=10 V
Input Capacitance Ciss β€” 6.8 nF
Output Capacitance Coss β€” 74 pF
Thermal Resistance RthJC β€” 0.72 K/W
Operating Junction Temperature β€” -55 Β°C to +175 Β°C

Datasheets & Resources

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