BSC022N04LS6ATMA1 vs BSC023N08NS5SCATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci BSC022N04LS6ATMA1 disebabkan oleh Infineon dan BSC023N08NS5SCATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
BSC023N08NS5SCATMA1 - 80V, 2.3mΩ OptiMOS 5 Power MOSFET | Infineon
BSC023N08NS5SCATMA1 ✓ AktifPengandingan Spesifikasi
| Parametr | BSC022N04LS6ATMA1 | BSC023N08NS5SCATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Technology | OptiMOS™ 6 (N-channel trench) | OptiMOS 5 (N-channel trench MOSFET) |
| Drain-Source Voltage (VDS) | 40 V | 80 V |
| Continuous Drain Current (ID) at Ta | 27 A | — |
| Continuous Drain Current (ID) at Tc | 100 A | — |
| Maximum Pulsed Drain Current (IDM) | 139 A | — |
| On-Resistance RDS(on) max | 2.2 mOhm at VGS=10 V | — |
| Power Dissipation (Ta) | 3 W | — |
| Power Dissipation (Tc) | 79 W | — |
| Kemasan | SuperSO8 5x6 (PG-TDSON-8-1) | PG-WSON-8-2 (SuperSO8 DSC) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Channel Type | N-Channel | — |
| Kiraan Pin | 8 | — |
| Suhu Operasi | -55 C to +175 C (junction) | — |
| Status RoHS | Compliant | Compliant |
| Part Number | — | BSC023N08NS5SCATMA1 |
| Continuous Drain Current (ID, Tc=25°C) | — | 202 A |
| Power Dissipation (PD, Tc=25°C) | — | 188 W |
| On-State Resistance RDS(on) typ. | — | 2.3 mΩ at VGS=10 V, ID=50 A |
| Gate Threshold Voltage VGS(th) typ. | — | 3.8 V |
| Total Gate Charge Qg | — | 98 nC at VGS=10 V |
| Input Capacitance Ciss | — | 6.8 nF |
| Output Capacitance Coss | — | 74 pF |
| Thermal Resistance RthJC | — | 0.72 K/W |
| Suhu Hubungan Operasi | — | -55 °C to +175 °C |