BSC026N04LSATMA1 vs BSC019N04LSTATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng BSC026N04LSATMA1 sa pamamagitan ng Infineon at BSC019N04LSTATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
BSC026N04LSATMA1 BSC026N04LSATMA1 - 40V N-Ch OptiMOS 2.6mΩ MOSFET | Infineon

BSC026N04LSATMA1 - 40V N-Ch OptiMOS 2.6mΩ MOSFET | Infineon

BSC026N04LSATMA1 ✓ Nakahanda
Infineon
BSC019N04LSTATMA1 BSC019N04LSTATMA1 - 40V N-Ch OptiMOS 5 Power MOSFET | Infineon

BSC019N04LSTATMA1 - 40V N-Ch OptiMOS 5 Power MOSFET | Infineon

BSC019N04LSTATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro BSC026N04LSATMA1 BSC019N04LSTATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies —
Part Family OptiMOS™ 5 N-Channel Power MOSFET —
Drain-Source Voltage (VDS) 40 V 40 V
Gate-Source Voltage (VGS) max ±20 V —
Continuous Drain Current (ID, Ta) 23 A —
Continuous Drain Current (ID, Tc=25°C) 100 A —
Pulsed Drain Current (IDM, Tc=25°C) [DATA_NEEDED: pulsed drain current] —
On-Resistance RDS(on) typ @ VGS=10V 2.6 mΩ —
On-Resistance RDS(on) max @ VGS=10V [DATA_NEEDED: max RDS(on)] 1.9 mOhm
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) value] —
Power Dissipation (Ta) 2.5 W —
Power Dissipation (Tc) 63 W —
Hanay ng Temperature na Operasyon -55°C to +150°C -55 C to +150 C
Packhaging PG-TDSON-8-6 (TDSON 5x6 mm) TDSON-8 (SuperSO8) 5x6 mm
Uri ng Pagpapasok Surface Mount Surface Mount
Technology Trench-gate OptiMOS™ 5 OptiMOS 5 (N-channel trench MOSFET)
Channel Type N-Channel —
Tindminan RoHS Compliant Compliant
Continuous Drain Current (ID, Tc=25C) — 161 A
Continuous Drain Current (ID, Ta=25C) — 28 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed ID limit]
On-Resistance RDS(on) max @ VGS=4.5V — [DATA_NEEDED: RDS(on) at 4.5V]
Gate Threshold Voltage VGS(th) typ — 1.7 V
Total Gate Charge Qg typ — 85 nC
Power Dissipation PD (Tc=25C) — 94 W
Level ng MSL — 1 (unlimited)
Lead-Free / Halogen-Free — Yes / Yes
Avalanche Rated — Yes

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