BSC027N06LS5ATMA1 vs BSZ070N08LS5ATMA1 Perbandingan

Perbandingan bersamaan detil BSC027N06LS5ATMA1 dari Infineon dan BSZ070N08LS5ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
BSC027N06LS5ATMA1 BSC027N06LS5ATMA1 - 60V 2.7mOhm N-Ch OptiMOS 5 | Infineon

BSC027N06LS5ATMA1 - 60V 2.7mOhm N-Ch OptiMOS 5 | Infineon

BSC027N06LS5ATMA1 ✓ Aktif
Infineon
BSZ070N08LS5ATMA1 BSZ070N08LS5ATMA1 - 80V 7mΩ OptiMOS 5 N-FET | Infineon

BSZ070N08LS5ATMA1 - 80V 7mΩ OptiMOS 5 N-FET | Infineon

BSZ070N08LS5ATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum BSC027N06LS5ATMA1 BSZ070N08LS5ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS™ 5 —
Part Status Active —
FET Type N-Channel —
Technology MOSFET (Metal Oxide) —
Drain-Source Voltage (VDS) 60 V —
Gate-Source Voltage (VGS) ±20 V —
Gate Threshold Voltage (VGS(th)) Logic-level —
Continuous Drain Current (ID) at Tc=25°C 100 A —
Continuous Drain Current (ID) at Tc=100°C [DATA_NEEDED: ID at Tc=100C] —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed IDM] [DATA_NEEDED: IDM pulsed]
On-Resistance (RDS(on)) max @ VGS=10V 2.7 mOhm —
On-Resistance (RDS(on)) @ VGS=4.5V [DATA_NEEDED: RDS(on) at 4.5V] —
Power Dissipation (PD) at Tc=25°C 83 W —
Rentang Suhu Kerja -55°C to +150°C —
Paket / Case PG-TDSON-8-7 (SuperSO8 5x6) —
Tipe Mounting Surface Mount Surface Mount
Jumlah Pin 8 —
Gate Charge (Qg) [DATA_NEEDED: total Qg] —
Avalanche Energy Rated Yes —
Status RoHS Compliant Compliant
MSL (Moisture Sensitivity Level) MSL1 —
Part Family — OptiMOS™ 5 (80 V logic-level)
Polarity / Channel Type — N-Channel enhancement mode
Drain-Source Voltage (VDS) max — 80 V
Gate-Source Voltage (VGS) max — ±20 V
Continuous Drain Current (ID) at TC — 74 A (Tc, per datasheet)
Continuous Drain Current (ID) at TA / Si — [DATA_NEEDED: TA-rated ID]
On-Resistance RDS(on) max @ VGS=10 V — 7 mΩ
On-Resistance RDS(on) @ VGS=4.5 V — [DATA_NEEDED: RDS(on) at 4.5 V]
Gate Threshold Voltage VGS(th) — Logic-level (drive compatible with 4.5 V)
Total Gate Charge Qg — [DATA_NEEDED: total Qg]
Power Dissition PD max at TC — 69 W
Suhu Hubung Kerja — -55 °C to +150 °C
Paket — PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm) Surface Mount
Level MSL — 1 (per JEDEC J-STD-020, unleaded reflow)
Avalanche Rated — Yes
Reel Quantity — 5000 per 13-inch reel (T&R)

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