BSC027N06LS5ATMA1 vs BSZ070N08LS5ATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng BSC027N06LS5ATMA1 sa pamamagitan ng Infineon at BSZ070N08LS5ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
BSC027N06LS5ATMA1 BSC027N06LS5ATMA1 - 60V 2.7mOhm N-Ch OptiMOS 5 | Infineon

BSC027N06LS5ATMA1 - 60V 2.7mOhm N-Ch OptiMOS 5 | Infineon

BSC027N06LS5ATMA1 ✓ Nakahanda
Infineon
BSZ070N08LS5ATMA1 BSZ070N08LS5ATMA1 - 80V 7mΩ OptiMOS 5 N-FET | Infineon

BSZ070N08LS5ATMA1 - 80V 7mΩ OptiMOS 5 N-FET | Infineon

BSZ070N08LS5ATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro BSC027N06LS5ATMA1 BSZ070N08LS5ATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS™ 5 —
Part Status Active —
FET Type N-Channel —
Technology MOSFET (Metal Oxide) —
Drain-Source Voltage (VDS) 60 V —
Gate-Source Voltage (VGS) ±20 V —
Gate Threshold Voltage (VGS(th)) Logic-level —
Continuous Drain Current (ID) at Tc=25°C 100 A —
Continuous Drain Current (ID) at Tc=100°C [DATA_NEEDED: ID at Tc=100C] —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed IDM] [DATA_NEEDED: IDM pulsed]
On-Resistance (RDS(on)) max @ VGS=10V 2.7 mOhm —
On-Resistance (RDS(on)) @ VGS=4.5V [DATA_NEEDED: RDS(on) at 4.5V] —
Power Dissipation (PD) at Tc=25°C 83 W —
Hanay ng Temperature na Operasyon -55°C to +150°C —
Packhaging / Kaso PG-TDSON-8-7 (SuperSO8 5x6) —
Uri ng Pagpapasok Surface Mount Surface Mount
Bilang ng Pin 8 —
Gate Charge (Qg) [DATA_NEEDED: total Qg] —
Avalanche Energy Rated Yes —
Tindminan RoHS Compliant Compliant
MSL (Moisture Sensitivity Level) MSL1 —
Part Family — OptiMOS™ 5 (80 V logic-level)
Polarity / Channel Type — N-Channel enhancement mode
Drain-Source Voltage (VDS) max — 80 V
Gate-Source Voltage (VGS) max — ±20 V
Continuous Drain Current (ID) at TC — 74 A (Tc, per datasheet)
Continuous Drain Current (ID) at TA / Si — [DATA_NEEDED: TA-rated ID]
On-Resistance RDS(on) max @ VGS=10 V — 7 mΩ
On-Resistance RDS(on) @ VGS=4.5 V — [DATA_NEEDED: RDS(on) at 4.5 V]
Gate Threshold Voltage VGS(th) — Logic-level (drive compatible with 4.5 V)
Total Gate Charge Qg — [DATA_NEEDED: total Qg]
Power Dissition PD max at TC — 69 W
Temperature ng Junction na Operasyon — -55 °C to +150 °C
Packhaging — PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm) Surface Mount
Level ng MSL — 1 (per JEDEC J-STD-020, unleaded reflow)
Avalanche Rated — Yes
Reel Quantity — 5000 per 13-inch reel (T&R)

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