BSC040N08NS5ATMA1 vs ISC058N04NM5ATMA1 Perbandingan

Perbandingan bersamaan detil BSC040N08NS5ATMA1 dari Infineon dan ISC058N04NM5ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSC040N08NS5ATMA1 ISC058N04NM5ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSC040N08NS5ATMA1 —
Technology OptiMOS 5 (N-channel trench MOSFET) OptiMOS 5 trench MOSFET
Drain-Source Voltage (VDS) 80 V 40 V
Continuous Drain Current (ID, Tc=25C) 100 A 63 A
Maximum Drain Current (ID, Tc=25C, package-limited) 121 A —
On-Resistance (RDS(on) max, VGS=10V) 4 mOhm —
Power Dissipation (Ta=25C, 1in² PCB) 2.5 W —
Power Dissipation (Tc=25C) 104 W —
Paket PG-TDSON-8-7 (SuperSO8 5x6) PG-TDSON-8 FL (SuperSO8 5x6 mm)
Tipe Mounting Surface Mount Surface Mount
Suhu Hubung Kerja -55 C to +175 C —
Gate-Source Voltage (VGS) [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage (VGS(th) typ) [DATA_NEEDED: VGS(th) typical] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg typical] —
Status RoHS Compliant —
Level MSL 1 —
Primary Application Synchronous rectification in telecom and server power supplies —
Product Family — OptiMOS 5 40V Normal Level
Tipe Transistor — N-Channel MOSFET
Continuous Drain Current (ID, Ta=25C) — 17 A
On-Resistance Rds(on) max @ VGS=10V, ID=31A — 5.8 mOhm
Gate Threshold Voltage VGS(th) typ — 3.4 V
Power Dissipation (TA=25C) — 3 W
Power Dissipation (TC=25C) — 42 W
Rentang Suhu Kerja — -55C to +175C
RoHS Compliance — RoHS Compliant
MSL (Moisture Sensitivity Level) — MSL per JEDEC J-STD-020
Gate Drive Level — Normal Level (10V VGS recommended)

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