BSC042NE7NS3GATMA1 vs BSC077N12NS3GATMA1 Comparison

Detailed side-by-side comparison of BSC042NE7NS3GATMA1 by Infineon and BSC077N12NS3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSC042NE7NS3GATMA1

BSC042NE7NS3GATMA1 - 75V N-Ch OptiMOS 3 MOSFET | Infineon

BSC042NE7NS3GATMA1 βœ“ Active
Infineon
BSC077N12NS3GATMA1

BSC077N12NS3GATMA1 - 120V OptiMOS 3 N-Ch MOSFET, 7.7mΞ© | Infineon

BSC077N12NS3GATMA1 βœ“ Active

Specification Comparison

Parameter BSC042NE7NS3GATMA1 BSC077N12NS3GATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.24 $0.71
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSC042NE7NS3GATMA1 β€”
Transistor Type N-Channel MOSFET N-Channel MOSFET (enhancement-mode trench)
Technology OptiMOS 3 β€”
Drain-Source Voltage (VDS) 75 V 120 V
Continuous Drain Current (ID) at Ta 19 A 13.4 A
Continuous Drain Current (ID) at Tc 100 A 98 A
RDS(on) max at VGS=10V 4.2 mOhm β€”
Gate-Source Voltage (VGS) max +/-20 V [DATA_NEEDED: VGS max]
Gate Threshold Voltage (VGS(th)) typ 1.7 V β€”
Power Dissipation (PD) at Ta 2.5 W β€”
Power Dissipation (PD) at Tc 125 W 139 W
Operating Temperature Range -55C to +150C β€”
Package PG-TDSON-8-1 (SuperSO8 5x6 mm) PG-TDSON-8-1 (SuperSO8 5x6 mm)
Mounting Type Surface Mount Surface Mount
MSL Level 1 1
RoHS Status Compliant Compliant
Part Family β€” OptiMOS 3 (120 V)
Pulsed Drain Current (IDM) β€” [DATA_NEEDED: IDM]
On-State Resistance RDS(on) max @ VGS=10V β€” 7.7 mΞ©
Gate Threshold Voltage VGS(th) typ β€” 2.5 V
Total Gate Charge Qg typ β€” [DATA_NEEDED: Qg]
Operating Junction Temperature β€” -55C to +150C
Pin Count β€” 8
Automotive Grade β€” Yes (per Infineon part number suffix / datasheet)

Datasheets & Resources

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