BSC042NE7NS3GATMA1 vs BSC077N12NS3GATMA1 Perbandingan
Perbandingan bersamaan detil BSC042NE7NS3GATMA1 dari Infineon dan BSC077N12NS3GATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
BSC077N12NS3GATMA1 - 120V OptiMOS 3 N-Ch MOSFET, 7.7mΩ | Infineon
BSC077N12NS3GATMA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | BSC042NE7NS3GATMA1 | BSC077N12NS3GATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSC042NE7NS3GATMA1 | — |
| Tipe Transistor | N-Channel MOSFET | N-Channel MOSFET (enhancement-mode trench) |
| Technology | OptiMOS 3 | — |
| Drain-Source Voltage (VDS) | 75 V | 120 V |
| Continuous Drain Current (ID) at Ta | 19 A | 13.4 A |
| Continuous Drain Current (ID) at Tc | 100 A | 98 A |
| RDS(on) max at VGS=10V | 4.2 mOhm | — |
| Gate-Source Voltage (VGS) max | +/-20 V | [DATA_NEEDED: VGS max] |
| Gate Threshold Voltage (VGS(th)) typ | 1.7 V | — |
| Power Dissipation (PD) at Ta | 2.5 W | — |
| Power Dissipation (PD) at Tc | 125 W | 139 W |
| Rentang Suhu Kerja | -55C to +150C | — |
| Paket | PG-TDSON-8-1 (SuperSO8 5x6 mm) | PG-TDSON-8-1 (SuperSO8 5x6 mm) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Level MSL | 1 | 1 |
| Status RoHS | Compliant | Compliant |
| Part Family | — | OptiMOS 3 (120 V) |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM] |
| On-State Resistance RDS(on) max @ VGS=10V | — | 7.7 mΩ |
| Gate Threshold Voltage VGS(th) typ | — | 2.5 V |
| Total Gate Charge Qg typ | — | [DATA_NEEDED: Qg] |
| Suhu Hubung Kerja | — | -55C to +150C |
| Jumlah Pin | — | 8 |
| Automotive Grade | — | Yes (per Infineon part number suffix / datasheet) |