BSC042NE7NS3GATMA1 - 75V N-Ch OptiMOS 3 MOSFET | Infineon
MPN: BSC042NE7NS3GATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $2.7 | $2.70 |
| 10 | $2.43 | $24.30 |
| 100 | $1.95 | $195.00 |
| 500 | $1.61 | $805.00 |
| 1,000 | $1.33 | $1,330.00 |
| 2,000 | $1.24 | $2,480.00 |
Drop-in alternatives for BSC042NE7NS3GATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
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BSC036NE7NS3GATMA1
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BSC047N08NS3GATMA1
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View Datasheet →BSC0902NSATMA1
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View Datasheet →BSC077N12NS3GATMA1
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View Datasheet →BSC042NE7NS3GATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Part Number | BSC042NE7NS3GATMA1 |
| Transistor Type | N-Channel MOSFET |
| Technology | OptiMOS 3 |
| Drain-Source Voltage (VDS) | 75 V |
| Continuous Drain Current (ID) at Ta | 19 A |
| Continuous Drain Current (ID) at Tc | 100 A |
| RDS(on) max at VGS=10V | 4.2 mOhm |
| Gate-Source Voltage (VGS) max | +/-20 V |
| Gate Threshold Voltage (VGS(th)) typ | 1.7 V |
| Power Dissipation (PD) at Ta | 2.5 W |
| Power Dissipation (PD) at Tc | 125 W |
| Operating Temperature Range | -55C to +150C |
| Package | PG-TDSON-8-1 (SuperSO8 5x6 mm) |
| Mounting Type | Surface Mount |
| MSL Level | 1 |
| RoHS Status | Compliant |
BSC042NE7NS3GATMA1 Pin Configuration
| Pin 1 | Gate — Gate drive input (VGS) |
| Pin 2 | Source — Source terminal (low-side reference) |
| Pin 3 | Source — Source terminal |
| Pin 4 | Source — Source terminal |
| Pin 5 | Source — Source terminal |
| Pin 6 | Source — Source terminal |
| Pin 7 | Source — Source terminal |
| Pin 8 | Source — Source terminal |
| Pin Pad | Drain — Drain terminal (exposed thermal pad on bottom) |
Safe Operating Area (DC, Tcase=25C)
Typical Applications
BSC042NE7NS3GATMA1 is suitable for 7 applications: 48V Telecom Synchronous Rectification, Server and Datacenter DC-DC Converters, Industrial Motor Drive and H-Bridge, E-Mobility and Battery Management, Hot-Swap and OR-ing Controllers, Class-D Audio Amplifier Output Stage, Solar Microinverter and MPPT Stage.
48V Telecom Synchronous Rectification
The BSC042NE7NS3GATMA1 is purpose-built for synchronous rectification in 48V telecom bus converters where its 75V VDS rating provides margin above the 48V nominal (and below the 80V transient limit specified by ETSI EN 300 132-2). The 4.2 mOhm RDS(on) minimizes conduction loss at 30-60A output currents, while the optimized body diode enables reliable dead-time conduction in half-bridge and full-bridge LLC topologies. At 100 kHz switching with 50% duty cycle, the part dissipates significantly less than 80V competitors, allowing higher power density in 1U rectifier shelves where every watt of MOSFET loss reduces the budget for cooling fans.
Recommended
Server and Datacenter DC-DC Converters
In server VR (voltage regulator) applications powering multi-core CPUs, GPUs, and ASICs from 48V inputs, the BSC042NE7NS3GATMA1 serves as the primary-side switch in buck-derived topologies such as the 4-to-1 LLC and current-doubler. The 100A continuous current capability at Tc handles the high step-down ratios required for 12V intermediate bus conversion, while the low 4.2 mOhm RDS(on) keeps efficiency above 97% at full load. Hyperscale operators care about every 0.1% efficiency improvement; this part's OptiMOS 3 figure-of-merit (RDS(on) * Qg) outperforms many earlier-generation 80V MOSFETs.
Recommended
Industrial Motor Drive and H-Bridge
The BSC042NE7NS3GATMA1 enables compact H-bridge motor drives for 24V and 48V brushless DC (BLDC) motors used in industrial automation, robotics, and AGV applications. Its 75V VDS accommodates back-EMF spikes up to 4x the supply rail typical of trapezoidal commutation, while the 100A pulsed rating handles motor inrush and stall currents. Designers often pair this MOSFET with the Infineon IRS2184STRPBF or 2ED2183S06FXUMA1 gate driver for robust switching at 20-50 kHz PWM frequencies. The PG-TDSON-8-1 exposed pad simplifies thermal management in space-constrained IPM (intelligent power module) designs.
Recommended
E-Mobility and Battery Management
In 36V to 48V e-mobility systems including e-bikes, e-scooters, and power tools, the BSC042NE7NS3GATMA1 serves as the high-side and low-side switch in battery pack discharge management and active balancing circuits. The 4.2 mOhm RDS(on) keeps I2R losses manageable during peak discharge currents of 50-100A, preserving battery run-time. The 75V rating handles pack overvoltage transients up to 60V (15S Li-ion at full charge) with comfortable margin. Compact PG-TDSON-8-1 packaging enables high power density in battery-mounted BMS PCBs where space and weight are at a premium.
Recommended
Hot-Swap and OR-ing Controllers
The BSC042NE7NS3GATMA1 functions as the main pass-MOSFET in 48V hot-swap and OR-ing controllers used in redundant telecom and server power architectures. Its 75V VDS rating handles 48V nominal with margin for transients up to 72V (ETSI), while 100A continuous current capability supports full-power bus distribution. The low RDS(on) minimizes steady-state voltage drop across the OR-ing FET, critical for minimizing power dissipation in dual-feed server backplanes. Designers use this part in conjunction with hot-swap controllers like the LTC4215 or LM25061 for inrush current limiting and fault isolation.
Recommended
Class-D Audio Amplifier Output Stage
In high-power Class-D audio amplifiers delivering 500W to 2 kW per channel, the BSC042NE7NS3GATMA1 serves as the output half-bridge switch in 48V rail designs. The 75V VDS handles 48V rail with comfortable margin for inductive kickback from the LC output filter, while the 4.2 mOhm RDS(on) achieves amplifier efficiency above 95%, minimizing heat dissipation and enabling smaller enclosures. Low output capacitance (Coss) of the OptiMOS 3 family reduces dead-time distortion, preserving audio fidelity. The part pairs well with IRS2153DSPBF self-oscillating gate drivers in compact Class-D modules.
Recommended
Solar Microinverter and MPPT Stage
The BSC042NE7NS3GATMA1 operates as the primary-side switch in 60V solar microinverters and maximum power point tracking (MPPT) converters. The 75V VDS rating accommodates 60V solar panel open-circuit voltage (Voc) at cold temperature extremes (below -10C), when Voc can rise 15-20% above standard test conditions. With 4.2 mOhm RDS(on) and 100A capability, it handles the 30-50A MPPT currents typical of 1-2 kW residential microinverters. The OptiMOS 3 technology's low reverse recovery charge (Qrr) reduces switching loss in CCM boost topologies.
Recommended
Recommended Products Summary
Engineering reference data for BSC042NE7NS3GATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | BSC036NE7NS3GATMA1 | BSC047N08NS3GATMA1 | BSC0902NSATMA1 | BSC123N08NS3GATMA1 |
|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-TDSON-8-1 (SuperSO8 5x6) | PG-TDSON-8-1 (SuperSO8 5x6) - same | PG-TDSON-8-1 (SuperSO8 5x6) - same | PG-TDSON-8-1 (SuperSO8 5x6) - same | PG-TDSON-8-1 (SuperSO8 5x6) - same |
| VDS (V) | 75 | 75 | 80 | 75 | 75 |
| RDS(on) max at VGS=10V (mOhm) | 4.2 | 3.6 | 4.7 | 9.0 | 12.3 |
| Continuous ID at Tc (A) | 100 | 100 | 100 | 60 | 50 |
| Power Dissipation at Tc (W) | 125 | 125 | 125 | 100 | 83 |
| Technology Family | OptiMOS 3 | OptiMOS 3 | OptiMOS 3 | OptiMOS 2 | OptiMOS 3 |
| Gate Threshold VGS(th) typ (V) | 1.7 | 1.7 | 1.7 | 2.0 | 1.7 |
Key Differentiators
- Lower RDS(on) at 75V than competing 80V MOSFETs (vs BSC047N08NS3GATMA1)
- Higher current capability than cost-down versions (vs BSC123N08NS3GATMA1)
- Lower RDS(on) than 120V-class MOSFETs in same package (vs BSC077N12NS3GATMA1)
- Industry-standard OptiMOS 3 figure-of-merit (vs BSC0902NSATMA1)
Design Notes
Estimated: at 100A continuous drain current, the BSC042NE7NS3GATMA1 dissipates approximately 42W (I2 * R = 100 * 100 * 0.0042). The PG-TDSON-8-1 package has junction-to-case thermal resistance (theta_JC) of approximately 1.0 C/W, meaning the silicon junction rises 42C above the exposed pad temperature. The exposed pad must be soldered to a PCB copper pour of at least 1 square inch (645 mm2) of 2 oz copper on both sides to keep junction temperature below 150C. Without adequate copper, expect 30-50% reduction in usable current capacity.
Keep the gate drive loop area as small as possible - place the gate driver IC within 5mm of the gate pin (pin 1) to minimize parasitic inductance that causes gate ringing and potential avalanche. Use a 10 ohm gate resistor with split turn-on/turn-off values if switching losses are critical; the gate charge (Qg) of the OptiMOS 3 part requires careful driver selection. The source pins (2-8) must all be soldered to a low-impedance ground plane; floating source pins increase on-resistance and cause thermal runaway.
Do not exceed VGS ratings of +/-20V - transients beyond 20V can permanently damage the thin gate oxide. Add a 10V Zener diode from gate to source if using unregulated supplies. Avoid operating in linear mode for more than microseconds; sustained operation in the active region (VDS between 1V and VDS(max)) causes rapid thermal failure. Use a gate-source resistor (10k to 100k) to ensure the MOSFET stays off when the gate driver is tri-stated during power-up.
Recommended PCB land pattern follows IPC-7351 SuperSO8 (5x6 mm) guidelines with a central thermal pad of approximately 3.5x4.5 mm. Use thermal vias (12-16 vias, 0.3 mm diameter) under the drain pad to conduct heat to inner copper layers. For high-current (>50A) applications, use 2 oz copper on outer layers and 1 oz on inner layers to minimize trace resistance, which can add several milliohms and erode the low-RDS(on) advantage.
Compliance Information
RoHS compliant per Infineon product page. Not AEC-Q100 qualified - select automotive-qualified OptiMOS variants for automotive applications. Lead-free and halogen-free per PG-TDSON-8-1 material declaration.
