BSC050N03LSGATMA1 vs BSC014N04LSIATMA1 Comparison
Detailed side-by-side comparison of BSC050N03LSGATMA1 by Infineon and BSC014N04LSIATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC050N03LSGATMA1
BSC050N03LSGATMA1 - 30V 80A 5mOhm OptiMOS 3 N-FET | Infineon
BSC050N03LSGATMA1 β ActiveInfineon
BSC014N04LSIATMA1
BSC014N04LSIATMA1 - 40V 100A OptiMOS N-FET | Infineon
BSC014N04LSIATMA1 β ActiveSpecification Comparison
| Parameter | BSC050N03LSGATMA1 | BSC014N04LSIATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.36 | $0.39 |
| Manufacturer | Infineon Technologies | β |
| Part Number | BSC050N03LSGATMA1 | β |
| Technology | OptiMOS 3 (N-channel trench MOSFET) | OptiMOS 5 (trench, thin-wafer) |
| Drain-Source Voltage (VDS) Max | 30 V | β |
| Continuous Drain Current (ID) at Tc | 80 A | β |
| Continuous Drain Current (ID) at Ta | 18 A | β |
| On-State Resistance (RDS(on)) Max at VGS=10V | 5 mOhm | β |
| Power Dissipation (PD) at Tc | 50 W | β |
| Power Dissipation (PD) at Ta | 2.5 W | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | β |
| Package | PG-TDSON-8-5 (SuperSO8 5x6 mm) | PG-TDSON-8 FL (TDSON-8 with exposed drain pad) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55 C to +150 C | -55 C to +150 C |
| Channel Type | N-Channel | β |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 | 1 (per JEDEC J-STD-020) |
| FET Type | β | N-Channel |
| Drain-Source Voltage (VDS) | β | 40 V |
| Continuous Drain Current (ID, Tc) | β | 100 A |
| Continuous Drain Current (ID, Ta) | β | 31 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed IDM rating] |
| RDS(on) max at VGS=10 V | β | 1.4 mOhm |
| Gate-Source Voltage (VGS) max | β | [DATA_NEEDED: VGS absolute maximum] |
| Gate Threshold Voltage (VGS(th) typ) | β | [DATA_NEEDED: VGS(th) typical] |
| Power Dissipation (PD, Tc) | β | 96 W |
| Power Dissipation (PD, Ta) | β | 2.5 W |
| Tradename | β | OptiMOS |