BSC076N04NDATMA1 vs BSZ100N03MSGATMA1 Comparison
Detailed side-by-side comparison of BSC076N04NDATMA1 by Infineon and BSZ100N03MSGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSZ100N03MSGATMA1 - 30V N-Ch OptiMOS 40A TSDSON-8 MOSFET | Infineon
BSZ100N03MSGATMA1 β ActiveSpecification Comparison
| Parameter | BSC076N04NDATMA1 | BSZ100N03MSGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.82 | $0.41 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 3 | β |
| Configuration | Dual N-Channel (independent MOSFETs) | Single with built-in body diode |
| Drain-Source Voltage (VDS) max | 40 V | β |
| Continuous Drain Current (ID) | 20 A (Tc) | β |
| Gate Threshold Voltage (VGS(th)) | 4 V (max, typical) | β |
| On-Resistance RDS(on) max | 7.6 mOhm | β |
| Power Dissipation (Ta) | 2.3 W | β |
| Power Dissipation (Tc) | 65 W | β |
| Technology | Trench MOSFET (OptiMOS 3) | Trench MOSFET (OptiMOS) |
| Qgd/Qgs Ratio | < 0.8 (high shot-through immunity) | β |
| Operating Junction Temperature | -55 C to +175 C | β |
| Package / Case | PG-TDSON-8-4 (SuperSO8, 5x6 mm) | β |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS / Pb-Free | Compliant (Pb-free plating) | β |
| FET Type | 2x N-Channel MOSFET array | β |
| Part Family | β | OptiMOS 25V / 30V |
| Transistor Type | β | N-Channel MOSFET |
| Maximum Drain-Source Voltage (VDS) | β | 30 V |
| Continuous Drain Current (ID) at TA | β | 10 A |
| Continuous Drain Current (ID) at TC | β | 40 A |
| Power Dissipation (PD) at TA | β | 2.1 W |
| Power Dissipation (PD) at TC | β | 30 W |
| Gate-Source Voltage (VGS) max | β | [DATA_NEEDED: Β±20 V typical per datasheet; verify in datasheet] |
| Package | β | PG-TSDSON-8 (5x6 mm) |
| Terminal Finish | β | Tin (Pb-free) |
| Operating Temperature Range | β | -55C to +150C (junction) |
| Qualification | β | JEDEC - target application qualified |
| Avalanche Tested | β | 100% (per JEDEC) |
| RoHS Compliance | β | Compliant (Pb-free plating) |
| Halogen-Free | β | Yes (per IEC 61249-2-21) |
| RDS(on) at VGS=10V (typical) | β | [DATA_NEEDED: see datasheet Diagram 1] |
| Gate Charge Qg (typical) | β | [DATA_NEEDED: see datasheet] |
| MSL Level | β | MSL1 (per JEDEC J-STD-020) |