BSC076N04NDATMA1 vs BSZ100N03MSGATMA1 比較

詳細並排比較 BSC076N04NDATMA1 由 Infineon 與 BSZ100N03MSGATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
BSC076N04NDATMA1 BSC076N04NDATMA1 - 40V 20A 7.6mOhm Dual N-MOSFET | Infineon

BSC076N04NDATMA1 - 40V 20A 7.6mOhm Dual N-MOSFET | Infineon

BSC076N04NDATMA1 ✓ 啟用中

規格比較

參數 BSC076N04NDATMA1 BSZ100N03MSGATMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 3 —
Configuration Dual N-Channel (independent MOSFETs) Single with built-in body diode
Drain-Source Voltage (VDS) max 40 V —
Continuous Drain Current (ID) 20 A (Tc) —
Gate Threshold Voltage (VGS(th)) 4 V (max, typical) —
On-Resistance RDS(on) max 7.6 mOhm —
Power Dissipation (Ta) 2.3 W —
Power Dissipation (Tc) 65 W —
Technology Trench MOSFET (OptiMOS 3) Trench MOSFET (OptiMOS)
Qgd/Qgs Ratio < 0.8 (high shot-through immunity) —
工作接面溫度 -55 C to +175 C —
封裝 / 外殼 PG-TDSON-8-4 (SuperSO8, 5x6 mm) —
安裝類型 Surface Mount Surface Mount
RoHS / Pb-Free Compliant (Pb-free plating) —
FET Type 2x N-Channel MOSFET array —
Part Family — OptiMOS 25V / 30V
電晶體類型 — N-Channel MOSFET
Maximum Drain-Source Voltage (VDS) — 30 V
Continuous Drain Current (ID) at TA — 10 A
Continuous Drain Current (ID) at TC — 40 A
Power Dissipation (PD) at TA — 2.1 W
Power Dissipation (PD) at TC — 30 W
Gate-Source Voltage (VGS) max — [DATA_NEEDED: ±20 V typical per datasheet; verify in datasheet]
封裝 — PG-TSDSON-8 (5x6 mm)
Terminal Finish — Tin (Pb-free)
工作溫度範圍 — -55C to +150C (junction)
Qualification — JEDEC - target application qualified
Avalanche Tested — 100% (per JEDEC)
RoHS Compliance — Compliant (Pb-free plating)
無鹵素 — Yes (per IEC 61249-2-21)
RDS(on) at VGS=10V (typical) — [DATA_NEEDED: see datasheet Diagram 1]
Gate Charge Qg (typical) — [DATA_NEEDED: see datasheet]
MSL 等級 — MSL1 (per JEDEC J-STD-020)

資料表與資源

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