BSC076N04NDATMA1 vs BSZ100N03MSGATMA1 对比

详细并排对比 BSC076N04NDATMA1 出自 Infineon 和 BSZ100N03MSGATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
BSC076N04NDATMA1 BSC076N04NDATMA1 - 40V 20A 7.6mOhm Dual N-MOSFET | Infineon

BSC076N04NDATMA1 - 40V 20A 7.6mOhm Dual N-MOSFET | Infineon

BSC076N04NDATMA1 ✓ 量产中

规格对比

参数 BSC076N04NDATMA1 BSZ100N03MSGATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.82 $0.41
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 3 —
Configuration Dual N-Channel (independent MOSFETs) Single with built-in body diode
Drain-Source Voltage (VDS) max 40 V —
Continuous Drain Current (ID) 20 A (Tc) —
Gate Threshold Voltage (VGS(th)) 4 V (max, typical) —
On-Resistance RDS(on) max 7.6 mOhm —
Power Dissipation (Ta) 2.3 W —
Power Dissipation (Tc) 65 W —
Technology Trench MOSFET (OptiMOS 3) Trench MOSFET (OptiMOS)
Qgd/Qgs Ratio < 0.8 (high shot-through immunity) —
工作结温 -55 C to +175 C —
封装 / 外壳 PG-TDSON-8-4 (SuperSO8, 5x6 mm) —
安装类型 Surface Mount Surface Mount
RoHS / Pb-Free Compliant (Pb-free plating) —
FET Type 2x N-Channel MOSFET array —
Part Family — OptiMOS 25V / 30V
晶体管类型 — N-Channel MOSFET
Maximum Drain-Source Voltage (VDS) — 30 V
Continuous Drain Current (ID) at TA — 10 A
Continuous Drain Current (ID) at TC — 40 A
Power Dissipation (PD) at TA — 2.1 W
Power Dissipation (PD) at TC — 30 W
Gate-Source Voltage (VGS) max — [DATA_NEEDED: ±20 V typical per datasheet; verify in datasheet]
封装 — PG-TSDSON-8 (5x6 mm)
Terminal Finish — Tin (Pb-free)
工作温度范围 — -55C to +150C (junction)
Qualification — JEDEC - target application qualified
Avalanche Tested — 100% (per JEDEC)
RoHS Compliance — Compliant (Pb-free plating)
无卤 — Yes (per IEC 61249-2-21)
RDS(on) at VGS=10V (typical) — [DATA_NEEDED: see datasheet Diagram 1]
Gate Charge Qg (typical) — [DATA_NEEDED: see datasheet]
MSL 等级 — MSL1 (per JEDEC J-STD-020)

数据手册与资源

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