BSC076N04NDATMA1 vs BSZ100N03MSGATMA1 Comparaison
Comparaison détaillée côte à côte de BSC076N04NDATMA1 par Infineon et BSZ100N03MSGATMA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Infineon
BSZ100N03MSGATMA1 - 30V N-Ch OptiMOS 40A TSDSON-8 MOSFET | Infineon
BSZ100N03MSGATMA1 ✓ ActifComparaison des spécifications
| Paramètre | BSC076N04NDATMA1 | BSZ100N03MSGATMA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,82 | $0,41 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 3 | — |
| Configuration | Dual N-Channel (independent MOSFETs) | Single with built-in body diode |
| Drain-Source Voltage (VDS) max | 40 V | — |
| Continuous Drain Current (ID) | 20 A (Tc) | — |
| Gate Threshold Voltage (VGS(th)) | 4 V (max, typical) | — |
| On-Resistance RDS(on) max | 7.6 mOhm | — |
| Power Dissipation (Ta) | 2.3 W | — |
| Power Dissipation (Tc) | 65 W | — |
| Technology | Trench MOSFET (OptiMOS 3) | Trench MOSFET (OptiMOS) |
| Qgd/Qgs Ratio | < 0.8 (high shot-through immunity) | — |
| Température de jonction en fonctionnement | -55 C to +175 C | — |
| Boîtier / Format | PG-TDSON-8-4 (SuperSO8, 5x6 mm) | — |
| Type de montage | Surface Mount | Surface Mount |
| RoHS / Pb-Free | Compliant (Pb-free plating) | — |
| FET Type | 2x N-Channel MOSFET array | — |
| Part Family | — | OptiMOS 25V / 30V |
| Type de transistor | — | N-Channel MOSFET |
| Maximum Drain-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current (ID) at TA | — | 10 A |
| Continuous Drain Current (ID) at TC | — | 40 A |
| Power Dissipation (PD) at TA | — | 2.1 W |
| Power Dissipation (PD) at TC | — | 30 W |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: ±20 V typical per datasheet; verify in datasheet] |
| Boîtier | — | PG-TSDSON-8 (5x6 mm) |
| Terminal Finish | — | Tin (Pb-free) |
| Plage de température de fonctionnement | — | -55C to +150C (junction) |
| Qualification | — | JEDEC - target application qualified |
| Avalanche Tested | — | 100% (per JEDEC) |
| RoHS Compliance | — | Compliant (Pb-free plating) |
| Sans halogène | — | Yes (per IEC 61249-2-21) |
| RDS(on) at VGS=10V (typical) | — | [DATA_NEEDED: see datasheet Diagram 1] |
| Gate Charge Qg (typical) | — | [DATA_NEEDED: see datasheet] |
| Niveau MSL | — | MSL1 (per JEDEC J-STD-020) |