BSC076N04NDATMA1 vs BSZ100N03MSGATMA1 Comparación
Comparación detallada lado a lado de BSC076N04NDATMA1 por Infineon y BSZ100N03MSGATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
BSZ100N03MSGATMA1 - 30V N-Ch OptiMOS 40A TSDSON-8 MOSFET | Infineon
BSZ100N03MSGATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | BSC076N04NDATMA1 | BSZ100N03MSGATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,82 | $0,41 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 3 | — |
| Configuration | Dual N-Channel (independent MOSFETs) | Single with built-in body diode |
| Drain-Source Voltage (VDS) max | 40 V | — |
| Continuous Drain Current (ID) | 20 A (Tc) | — |
| Gate Threshold Voltage (VGS(th)) | 4 V (max, typical) | — |
| On-Resistance RDS(on) max | 7.6 mOhm | — |
| Power Dissipation (Ta) | 2.3 W | — |
| Power Dissipation (Tc) | 65 W | — |
| Technology | Trench MOSFET (OptiMOS 3) | Trench MOSFET (OptiMOS) |
| Qgd/Qgs Ratio | < 0.8 (high shot-through immunity) | — |
| Temperatura de unión de funcionamiento | -55 C to +175 C | — |
| Encapsulado / Carcasa | PG-TDSON-8-4 (SuperSO8, 5x6 mm) | — |
| Tipo de montaje | Surface Mount | Surface Mount |
| RoHS / Pb-Free | Compliant (Pb-free plating) | — |
| FET Type | 2x N-Channel MOSFET array | — |
| Part Family | — | OptiMOS 25V / 30V |
| Tipo de transistor | — | N-Channel MOSFET |
| Maximum Drain-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current (ID) at TA | — | 10 A |
| Continuous Drain Current (ID) at TC | — | 40 A |
| Power Dissipation (PD) at TA | — | 2.1 W |
| Power Dissipation (PD) at TC | — | 30 W |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: ±20 V typical per datasheet; verify in datasheet] |
| Encapsulado | — | PG-TSDSON-8 (5x6 mm) |
| Terminal Finish | — | Tin (Pb-free) |
| Rango de temperatura de funcionamiento | — | -55C to +150C (junction) |
| Qualification | — | JEDEC - target application qualified |
| Avalanche Tested | — | 100% (per JEDEC) |
| RoHS Compliance | — | Compliant (Pb-free plating) |
| Sin halógenos | — | Yes (per IEC 61249-2-21) |
| RDS(on) at VGS=10V (typical) | — | [DATA_NEEDED: see datasheet Diagram 1] |
| Gate Charge Qg (typical) | — | [DATA_NEEDED: see datasheet] |
| Nivel MSL | — | MSL1 (per JEDEC J-STD-020) |