BSC076N04NDATMA1 vs IAUC50N08S5N102ATMA1 Comparison
Detailed side-by-side comparison of BSC076N04NDATMA1 by Infineon and IAUC50N08S5N102ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | BSC076N04NDATMA1 | IAUC50N08S5N102ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 3 | OptiMOS 5 |
| Configuration | Dual N-Channel (independent MOSFETs) | — |
| Drain-Source Voltage (VDS) max | 40 V | — |
| Continuous Drain Current (ID) | 20 A (Tc) | — |
| Gate Threshold Voltage (VGS(th)) | 4 V (max, typical) | [DATA_NEEDED: VGS(th) typical value] |
| On-Resistance RDS(on) max | 7.6 mOhm | — |
| Power Dissipation (Ta) | 2.3 W | — |
| Power Dissipation (Tc) | 65 W | — |
| Technology | Trench MOSFET (OptiMOS 3) | — |
| Qgd/Qgs Ratio | < 0.8 (high shot-through immunity) | — |
| Operating Junction Temperature | -55 C to +175 C | — |
| Package / Case | PG-TDSON-8-4 (SuperSO8, 5x6 mm) | PG-TDSON-8-33 |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS / Pb-Free | Compliant (Pb-free plating) | — |
| FET Type | 2x N-Channel MOSFET array | — |
| Transistor Type | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 80 V |
| Continuous Drain Current (ID) at TC=25°C | — | 50 A |
| On-Resistance (RDS(on)) | — | 10.2 mΩ @ 25 A, 10 V |
| Gate-Source Voltage (VGS) Max | — | ±20 V |
| Total Gate Charge (Qg) | — | 21 nC @ 10 V |
| Input Capacitance (Ciss) | — | 1394 pF @ 40 V |
| Power Dissipation (PD) at TC=25°C | — | 60 W |
| Operating Temperature Range | — | -55°C to +175°C |
| Qualification | — | AEC-Q101 |
| RoHS Status | — | Compliant |
| MSL Level | — | [DATA_NEEDED: MSL rating] |