BSC076N04NDATMA1 vs IAUC50N08S5N102ATMA1 Vergleich
Detaillierter Direktvergleich von BSC076N04NDATMA1 von Infineon und IAUC50N08S5N102ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | BSC076N04NDATMA1 | IAUC50N08S5N102ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,82 | $0,51 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 3 | OptiMOS 5 |
| Configuration | Dual N-Channel (independent MOSFETs) | — |
| Drain-Source Voltage (VDS) max | 40 V | — |
| Continuous Drain Current (ID) | 20 A (Tc) | — |
| Gate Threshold Voltage (VGS(th)) | 4 V (max, typical) | [DATA_NEEDED: VGS(th) typical value] |
| On-Resistance RDS(on) max | 7.6 mOhm | — |
| Power Dissipation (Ta) | 2.3 W | — |
| Power Dissipation (Tc) | 65 W | — |
| Technology | Trench MOSFET (OptiMOS 3) | — |
| Qgd/Qgs Ratio | < 0.8 (high shot-through immunity) | — |
| Betriebs-Sperrschichttemperatur | -55 C to +175 C | — |
| Gehäuse / Bauform | PG-TDSON-8-4 (SuperSO8, 5x6 mm) | PG-TDSON-8-33 |
| Montageart | Surface Mount | Surface Mount |
| RoHS / Pb-Free | Compliant (Pb-free plating) | — |
| FET Type | 2x N-Channel MOSFET array | — |
| Transistortyp | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 80 V |
| Continuous Drain Current (ID) at TC=25°C | — | 50 A |
| On-Resistance (RDS(on)) | — | 10.2 mΩ @ 25 A, 10 V |
| Gate-Source Voltage (VGS) Max | — | ±20 V |
| Total Gate Charge (Qg) | — | 21 nC @ 10 V |
| Input Capacitance (Ciss) | — | 1394 pF @ 40 V |
| Power Dissipation (PD) at TC=25°C | — | 60 W |
| Betriebstemperaturbereich | — | -55°C to +175°C |
| Qualification | — | AEC-Q101 |
| RoHS-Status | — | Compliant |
| MSL-Level | — | [DATA_NEEDED: MSL rating] |