BSC076N06NS3GATMA1 vs BSC047N08NS3GATMA1 Comparison

Detailed side-by-side comparison of BSC076N06NS3GATMA1 by Infineon and BSC047N08NS3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSC047N08NS3GATMA1 BSC047N08NS3GATMA1 - 80V 100A 4.7mOhm N-Ch MOSFET | Infineon

BSC047N08NS3GATMA1 - 80V 100A 4.7mOhm N-Ch MOSFET | Infineon

BSC047N08NS3GATMA1 βœ“ Active

Specification Comparison

Parameter BSC076N06NS3GATMA1 BSC047N08NS3GATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.65 $0.46
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 3 β€”
Technology N-Channel Trench MOSFET OptiMOSβ„’ 3 (N-channel trench)
Drain-Source Voltage (VDS) 60 V β€”
Continuous Drain Current (ID) at TC=25C 50 A β€”
On-Resistance RDS(on) max at VGS=10V 7.6 mΞ© β€”
On-Resistance RDS(on) max at VGS=4.5V 10.4 mΞ© β€”
Gate-Source Voltage (VGS) max Β±20 V β€”
Gate Threshold Voltage (VGS(th)) 2.0 V to 3.5 V β€”
Total Gate Charge (Qg) [DATA_NEEDED: Qg value] β€”
Power Dissipation (Ta) 2.5 W 2.5 W
Power Dissipation (Tc) 69 W β€”
Operating Temperature Range -55C to +150C -55 Β°C to +175 Β°C (Tj)
Package PG-TDSON-8-5 (SuperSO8 5x6 mm) PG-TDSON-8-1 (SuperSO8 5x6)
Mounting Type Surface Mount Surface Mount
MSL Level 1 (unlimited) β€”
RoHS Compliance Compliant β€”
Halogen-Free Yes (per Infineon product page) β€”
Part Number β€” BSC047N08NS3GATMA1
Drain-Source Voltage (VDS) max β€” 80 V
Continuous Drain Current (ID) at Tc β€” 100 A
Continuous Drain Current (ID) at Ta β€” 18 A
On-Resistance RDS(on) max β€” 4.7 mOhm at VGS=10 V
Power Dissition (Tc) β€” 125 W
Gate Threshold Voltage (VGS th) β€” Normal level (typ 1.7 V)
Avalanche Rated β€” 100% tested
RoHS / Halogen-Free β€” RoHS compliant, Halogen-free

Datasheets & Resources

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