BSC0911NDATMA1 vs BSC0902NSATMA1 Comparison

Detailed side-by-side comparison of BSC0911NDATMA1 by Infineon and BSC0902NSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter BSC0911NDATMA1 BSC0902NSATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Manufacturer Infineon Technologies —
Product Family OptiMOS 25V —
Configuration Dual N-Channel (2 N-CH) —
Drain-Source Voltage (VDS) 25 V 30 V
Continuous Drain Current (ID) 18 A —
Pulsed Drain Current (IDM) 30 A —
Power Dissipation (PD) 1 W —
Package PG-TISON-8 (8-PowerTDFN) PG-TDSON-8-6 (SuperSO8)
Mounting Type Surface Mount Surface Mount
Operating Temperature -55C to +150C (junction) —
Channel Type N-Channel Enhancement Mode —
Technology OptiMOS trench MOSFET —
Gate Threshold (VGS(th)) [DATA_NEEDED: gate threshold voltage] —
RDS(on) max @ VGS=10V [DATA_NEEDED: RDS(on) at 10V VGS] —
Total Gate Charge (Qg) [DATA_NEEDED: total gate charge] —
RoHS Status Compliant —
MSL Level [DATA_NEEDED: MSL rating] —
Transistor Type — N-Channel MOSFET
Continuous Drain Current (ID, Ta) — 24 A
Pulsed Drain Current (IDM, Tc) — 100 A
Power Dissipation (Ta) — 2.5 W
Power Dissipation (Tc) — 48 W
Gate Threshold Voltage (VGS(th) typ) — [DATA_NEEDED: VGS(th) typical value]
RDS(on) @ VGS=10V max — [DATA_NEEDED: RDS(on) at VGS=10V]
RDS(on) @ VGS=4.5V max — [DATA_NEEDED: RDS(on) at VGS=4.5V]
Total Gate Charge (Qg typ) — [DATA_NEEDED: Qg typical]
Operating Temperature Range — -55C to +150C (Tj)
Qualification — JEDEC qualified for target applications
RoHS Compliance — Compliant (Pb-free lead plating)
Halogen Free — Yes, per IEC 61249-2-21
Avalanche Rated — Yes (100% avalanche tested)

Datasheets & Resources

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