BSC0921NDIATMA1 vs ISZ056N03LF2SATMA1 Comparison
Detailed side-by-side comparison of BSC0921NDIATMA1 by Infineon and ISZ056N03LF2SATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC0921NDIATMA1
BSC0921NDIATMA1 - Dual N-Ch 30V OptiMOS 25V MOSFET | Infineon
BSC0921NDIATMA1 β ActiveInfineon
ISZ056N03LF2SATMA1 - 30V 72A N-Ch StrongIRFET 2 MOSFET | Infineon
ISZ056N03LF2SATMA1 β ActiveSpecification Comparison
| Parameter | BSC0921NDIATMA1 | ISZ056N03LF2SATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.68 | $0.49 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Technology | OptiMOS 25V (N-channel) | β |
| Configuration | Dual N-Channel MOSFET Array | β |
| Drain-Source Voltage (VDS) | 30 V | 30 V |
| Continuous Drain Current (ID) | 17 A (per channel) | β |
| Pulsed Drain Current (IDM) | 31 A (per channel, package-limited) | [DATA_NEEDED: pulsed drain current] |
| Total Power Dissipation (PD) | 1 W | β |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max rating] | β |
| On-State Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) at VGS=10V/4.5V] | β |
| Gate Charge (Qg) | Ultra-low (OptiMOS 25V family characteristic) | β |
| Output Charge (Qoss) | Ultra-low (OptiMOS 25V family characteristic) | β |
| Package | PG-TISON-8 (8-pin, exposed pad) | PG-TSDSON-8 (PQFN 3.3x3.3 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature | -55C to +150C (junction) | β |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 (per Infineon OptiMOS family) | β |
| Primary Application | Synchronous buck converters, VRMs, POL regulators | β |
| Series | β | StrongIRFET 2 |
| Transistor Type | β | N-Channel MOSFET |
| Continuous Drain Current (ID) at Ta | β | 16 A |
| Continuous Drain Current (ID) at Tc | β | 72 A |
| Gate-Source Voltage (VGS) max | β | [DATA_NEEDED: gate-source voltage max] |
| Gate Threshold Voltage (VGS(th)) | β | 2.35 V (typ) |
| On-Resistance (RDS(on)) max at VGS=10V | β | 5.6 mOhm |
| On-Resistance (RDS(on)) max at VGS=4.5V | β | [DATA_NEEDED: RDS(on) at 4.5V] |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: total gate charge] |
| Power Dissipation (PD) at Ta | β | 3 W |
| Power Dissipation (PD) at Tc | β | 52 W |
| Operating Temperature Range | β | -55 C to +175 C |