BSC0921NDIATMA1 vs ISZ056N03LF2SATMA1 비교

다음의 상세 나란히 비교: BSC0921NDIATMA1 제조: Infineon 및 ISZ056N03LF2SATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 BSC0921NDIATMA1 ISZ056N03LF2SATMA1
브랜드 Infineon Infineon
카테고리 MOSFETs MOSFETs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.68 $0.49
Manufacturer Infineon Technologies Infineon Technologies
Technology OptiMOS 25V (N-channel) —
Configuration Dual N-Channel MOSFET Array —
Drain-Source Voltage (VDS) 30 V 30 V
Continuous Drain Current (ID) 17 A (per channel) —
Pulsed Drain Current (IDM) 31 A (per channel, package-limited) [DATA_NEEDED: pulsed drain current]
Total Power Dissipation (PD) 1 W —
Gate-Source Voltage (VGS) [DATA_NEEDED: VGS max rating] —
On-State Resistance (RDS(on)) [DATA_NEEDED: RDS(on) at VGS=10V/4.5V] —
Gate Charge (Qg) Ultra-low (OptiMOS 25V family characteristic) —
Output Charge (Qoss) Ultra-low (OptiMOS 25V family characteristic) —
패키지 PG-TISON-8 (8-pin, exposed pad) PG-TSDSON-8 (PQFN 3.3x3.3 mm)
실장 유형 Surface Mount Surface Mount
동작 온도 -55C to +150C (junction) —
RoHS 상태 Compliant Compliant
MSL 레벨 1 (per Infineon OptiMOS family) —
Primary Application Synchronous buck converters, VRMs, POL regulators —
Series — StrongIRFET 2
트랜지스터 유형 — N-Channel MOSFET
Continuous Drain Current (ID) at Ta — 16 A
Continuous Drain Current (ID) at Tc — 72 A
Gate-Source Voltage (VGS) max — [DATA_NEEDED: gate-source voltage max]
Gate Threshold Voltage (VGS(th)) — 2.35 V (typ)
On-Resistance (RDS(on)) max at VGS=10V — 5.6 mOhm
On-Resistance (RDS(on)) max at VGS=4.5V — [DATA_NEEDED: RDS(on) at 4.5V]
Total Gate Charge (Qg) — [DATA_NEEDED: total gate charge]
Power Dissipation (PD) at Ta — 3 W
Power Dissipation (PD) at Tc — 52 W
동작 온도 범위 — -55 C to +175 C

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