BSC0921NDIATMA1 vs ISZ056N03LF2SATMA1 Comparaison
Comparaison détaillée côte à côte de BSC0921NDIATMA1 par Infineon et ISZ056N03LF2SATMA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Infineon
ISZ056N03LF2SATMA1 - 30V 72A N-Ch StrongIRFET 2 MOSFET | Infineon
ISZ056N03LF2SATMA1 ✓ ActifComparaison des spécifications
| Paramètre | BSC0921NDIATMA1 | ISZ056N03LF2SATMA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,68 | $0,49 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Technology | OptiMOS 25V (N-channel) | — |
| Configuration | Dual N-Channel MOSFET Array | — |
| Drain-Source Voltage (VDS) | 30 V | 30 V |
| Continuous Drain Current (ID) | 17 A (per channel) | — |
| Pulsed Drain Current (IDM) | 31 A (per channel, package-limited) | [DATA_NEEDED: pulsed drain current] |
| Total Power Dissipation (PD) | 1 W | — |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max rating] | — |
| On-State Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) at VGS=10V/4.5V] | — |
| Gate Charge (Qg) | Ultra-low (OptiMOS 25V family characteristic) | — |
| Output Charge (Qoss) | Ultra-low (OptiMOS 25V family characteristic) | — |
| Boîtier | PG-TISON-8 (8-pin, exposed pad) | PG-TSDSON-8 (PQFN 3.3x3.3 mm) |
| Type de montage | Surface Mount | Surface Mount |
| Température de fonctionnement | -55C to +150C (junction) | — |
| Statut RoHS | Compliant | Compliant |
| Niveau MSL | 1 (per Infineon OptiMOS family) | — |
| Primary Application | Synchronous buck converters, VRMs, POL regulators | — |
| Series | — | StrongIRFET 2 |
| Type de transistor | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at Ta | — | 16 A |
| Continuous Drain Current (ID) at Tc | — | 72 A |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: gate-source voltage max] |
| Gate Threshold Voltage (VGS(th)) | — | 2.35 V (typ) |
| On-Resistance (RDS(on)) max at VGS=10V | — | 5.6 mOhm |
| On-Resistance (RDS(on)) max at VGS=4.5V | — | [DATA_NEEDED: RDS(on) at 4.5V] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge] |
| Power Dissipation (PD) at Ta | — | 3 W |
| Power Dissipation (PD) at Tc | — | 52 W |
| Plage de température de fonctionnement | — | -55 C to +175 C |