BSC094N06LS5ATMA1 vs BSD235CH6327XTSA1 Comparison

Detailed side-by-side comparison of BSC094N06LS5ATMA1 by Infineon and BSD235CH6327XTSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter BSC094N06LS5ATMA1 BSD235CH6327XTSA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSC094N06LS5ATMA1 —
Technology OptiMOS™ 5 (logic-level) OptiMOS™ low-voltage
FET Type N-Channel —
Drain-to-Source Voltage (VDS) 60 V 20 V
Continuous Drain Current (ID) at TC=25°C 47 A —
Continuous Drain Current (ID) at TC=100°C [DATA_NEEDED: ID at TC=100C] —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM] —
RDS(on) max at VGS=10 V 9.4 mΩ —
RDS(on) max at VGS=4.5 V [DATA_NEEDED: RDS(on) at VGS=4.5V] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typ/range] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg typ] —
Power Dissipation (PD) at TC=25°C 36 W —
Operating Junction Temperature -55 °C to +150 °C —
Package PG-TDSON-8-6 (SuperSO8 5x6) —
Mounting Type Surface Mount Surface Mount
RoHS Status Compliant Compliant (lead-free)
MSL Level [DATA_NEEDED: MSL level] 1
Part Family — OptiMOS™
Configuration — N+P complementary dual MOSFET
N-Channel Continuous Drain Current (ID) — 950 mA
P-Channel Continuous Drain Current (ID) — 530 mA (negative polarity)
Total Power Dissipation (Ptot) — 500 mW
Package Type — PG-SOT363-6-1 (SOT-363, 6-pin)
Operating Temperature Range — -55 °C to +150 °C (junction)
Polarity — N-channel + P-channel
Channel Mode — Enhancement
Pin Count — 6

Datasheets & Resources

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