BSC094N06LS5ATMA1 vs IAUCN04S7N012ATMA1 Comparison
Detailed side-by-side comparison of BSC094N06LS5ATMA1 by Infineon and IAUCN04S7N012ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC094N06LS5ATMA1 - 60V 9.4mΩ 47A N-Channel OptiMOS 5 | Infineon
BSC094N06LS5ATMA1 ✓ Active
Specification Comparison
| Parameter | BSC094N06LS5ATMA1 | IAUCN04S7N012ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.38 | $1.18 |
| Manufacturer | Infineon Technologies | — |
| Part Number | BSC094N06LS5ATMA1 | — |
| Technology | OptiMOS™ 5 (logic-level) | OptiMOS-7 (trench) |
| FET Type | N-Channel | — |
| Drain-to-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID) at TC=25°C | 47 A | 120 A |
| Continuous Drain Current (ID) at TC=100°C | [DATA_NEEDED: ID at TC=100C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | — |
| RDS(on) max at VGS=10 V | 9.4 mΩ | — |
| RDS(on) max at VGS=4.5 V | [DATA_NEEDED: RDS(on) at VGS=4.5V] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/range] | [DATA_NEEDED: VGS(th) typical] |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typ] | [DATA_NEEDED: Qg typical] |
| Power Dissipation (PD) at TC=25°C | 36 W | — |
| Operating Junction Temperature | -55 °C to +150 °C | — |
| Package | PG-TDSON-8-6 (SuperSO8 5x6) | PG-TDSON-8-34 (8-PowerTDFN) |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant | Compliant |
| MSL Level | [DATA_NEEDED: MSL level] | 1 |
| Transistor Type | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 40 V |
| On-State Resistance RDS(on) max at VGS=10V | — | 1.2 mΩ |
| On-State Resistance RDS(on) max at VGS=4.5V | — | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS absolute max] |
| Operating Temperature Range | — | -55 °C to +175 °C [DATA_NEEDED: junction temperature max from datasheet] |
| Transistor Grade | — | Automotive (AEC-Q101) |
| Power Dissipation (Ptot) | — | [DATA_NEEDED: Ptot at TC=25°C] |
| Thermal Resistance RθJA | — | [DATA_NEEDED: RθJA on JEDEC PCB] |
| Halogen-Free | — | Yes |
| Polarity | — | N-Channel |