BSC0993NDATMA1 vs BSC155N06NDATMA1 Comparison
Detailed side-by-side comparison of BSC0993NDATMA1 by Infineon and BSC155N06NDATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | BSC0993NDATMA1 | BSC155N06NDATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Series | OptiMOS 5 30V | — |
| Configuration | Dual N-Channel (Array) | Dual N-channel MOSFET array |
| Drain-Source Voltage (Vds) | 30 V | — |
| Continuous Drain Current (Id) @ Ta | 17 A | — |
| Package | PG-TISON-8 | PG-TDSON-8-4 (SuperSO8 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | OptiMOS 5 trench MOSFET | OptiMOS 3 (N-channel trench) |
| Channel Mode | Enhancement | — |
| Operating Temperature Range | -55C to +150C (junction) | -55 C to +175 C |
| ESD Protection | Yes (integrated) | — |
| MSL Level | [DATA_NEEDED: MSL level] | 1 |
| RoHS Status | Compliant | Compliant (Pb-free plating) |
| Lead-Free | Yes | — |
| Rds(on) max @ Vgs=10V | [DATA_NEEDED: Rds(on) value] | — |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: Vgs(th) value] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg value] | — |
| Part Number | — | BSC155N06NDATMA1 |
| Drain-to-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID) at Tc=25C | — | 20 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-State Resistance RDS(on) max at VGS=10V | — | 15.5 mOhm |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: gate threshold voltage] |
| Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge] |
| Power Dissipation (Tc=25C) | — | 50 W |
| Lead-Free Plating | — | Yes |
| Shoot-Through Immunity Qgd/Qgs | — | < 0.8 |