BSC100N10NSFGATMA1 - 100V OptiMOS N-Channel MOSFET, 10mΩ | Infineon
MPN: BSC100N10NSFGATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $2.95 | $2.95 |
| 10 | $2.55 | $25.50 |
| 100 | $2.1 | $210.00 |
| 500 | $1.78 | $890.00 |
| 1,000 | $1.49 | $1,490.00 |
Drop-in alternatives for BSC100N10NSFGATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
BSC090N10NS3GATMA1
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BSC123N08NS3GATMA1
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✅ Drop-In ⚠️ 参数待验证✓ In Stock
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View Datasheet →BSC100N10NSFGATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Series | OptiMOS |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain-Source Voltage (VDS) | 100 V |
| Continuous Drain Current (ID), Ta | 11.4 A |
| Continuous Drain Current (ID), Tc | 90 A |
| Power Dissipation (PD), Tc | 156 W |
| Drain-Source On-Resistance (RDS(on)) max | 10 mΩ |
| Package | PG-TDSON-8-1 (SuperSO8 5x6) |
| Mounting Type | Surface Mount |
| Operating Temperature Range | -55C to +150C (junction) |
| Gate Drive Voltage (recommended) | 10 V (for rated RDS(on)) |
| RoHS Status | Compliant |
BSC100N10NSFGATMA1 Pin Configuration
| Pin 1 | G — Gate |
| Pin 2 | S — Source |
| Pin 3 | S — Source |
| Pin 4 | S — Source |
| Pin 5 | D — Drain |
| Pin 6 | D — Drain |
| Pin 7 | D — Drain |
| Pin 8 | D — Drain |
Safe Operating Area (estimated, based on PG-TDSON-8-1 100V class)
Typical Applications
BSC100N10NSFGATMA1 is suitable for 6 applications: 48V Telecom/Server SMPS Primary-Side Switch, Synchronous Rectifier in 48V→12V DC-DC Converters, DC-DC Point-of-Load (POL) Buck Stage, Motor Drive H-Bridge / Half-Bridge, Hot-Swap / OR-ing Circuit for Redundant 48V Rails, Solar Inverter / Photovoltaic Boost Stage.
48V Telecom/Server SMPS Primary-Side Switch
The BSC100N10NSFGATMA1 fits 48V nominal telecom and server SMPS primary-side switching where 100V VDS rating tolerates 80V transient excursions on the bus rail. Its 10 mΩ RDS(on) keeps conduction loss manageable at 20-40A load currents, while the low FOM (RDS(on)×Qg) enables 100-300 kHz switching frequencies that shrink magnetic size. Paired with a gate driver such as IRS2153D or IR2127S, it achieves >96% efficiency in 48V→12V LLC or hard-switched forward converters typical of distributed power architectures.
Recommended
Synchronous Rectifier in 48V→12V DC-DC Converters
In 48V bus to 12V/24V POL converter synchronous rectification stages, the BSC100N10NSFGATMA1 replaces Schottky diodes to cut conduction loss. Its 100V rating covers the rectified 48V bus with substantial margin, and its low gate charge (Qg) enables fast switching transitions that minimize dead-time loss in the complementary pair. The SuperSO8 5x6 footprint with exposed thermal pad supports the high RMS currents typical of continuous-conduction-mode (CCM) synchronous rectification at 100-300 kHz switching frequency.
Recommended
DC-DC Point-of-Load (POL) Buck Stage
For 24-48V input to 3-12V output buck POL modules, the BSC100N10NSFGATMA1 serves as the high-side or low-side switch. Its 100V VDS provides headroom for 48V telecom inputs with inductive ringing, while the 10 mΩ RDS(on) at 10V VGS drive keeps full-load efficiency above 95% at moderate switching frequencies. The SuperSO8 5x6 package's small footprint and exposed thermal pad allow compact POL designs that fit beneath BGA processors in server and networking equipment.
Recommended
Motor Drive H-Bridge / Half-Bridge
In 24-48V brushless DC (BLDC) and stepper motor H-bridge stages, the BSC100N10NSFGATMA1 handles PWM switching up to 50 kHz with low crossover loss thanks to its low Qgd/Qgs ratio. Its 100V rating covers back-EMF spikes from 48V motors under hard braking, and the 90A pulsed current rating supports inrush transients during motor startup. The SuperSO8 5x6 footprint allows compact multi-axis motor driver PCB designs for industrial automation and robotics.
Recommended
Hot-Swap / OR-ing Circuit for Redundant 48V Rails
In hot-swap and OR-ing circuits for redundant 48V server/telecom power feeds, the BSC100N10NSFGATMA1 acts as the load-switching element. Its 10 mΩ RDS(on) minimizes steady-state voltage drop and power dissipation in the always-on conduction path, while the 100V VDS rating handles inrush transients and back-feed from parallel supplies. The device's logic-level compatible gate threshold (when driven above 10V VGS) enables simple controller ICs such as the BTS500801TEAAUMA1 to manage turn-on/turn-off sequencing.
Recommended
Solar Inverter / Photovoltaic Boost Stage
In photovoltaic solar inverter boost stages operating from 24-80V panel input, the BSC100N10NSFGATMA1's 100V VDS rating tolerates open-circuit panel voltage at cold-temperature extremes while its 10 mΩ RDS(on) minimizes conduction loss in continuous PWM operation. The low FOM enables 50-100 kHz switching frequencies that shrink inductor size, and the exposed thermal pad supports sustained current at elevated ambient temperatures typical of outdoor inverter enclosures. The part's -55°C to +150°C junction rating ensures reliability across outdoor thermal cycling.
Recommended
Recommended Products Summary
Engineering reference data for BSC100N10NSFGATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | BSC090N10NS3GATMA1 | BSC042NE7NS3GATMA1 | BSC040N10NS5SCATMA1 | BSC123N08NS3GATMA1 | IAUC100N04S6L020ATMA1 | BSC093N15NS5ATMA1 |
|---|---|---|---|---|---|---|---|
| Package | PG-TDSON-8-1 (SuperSO8 5x6) | PG-TDSON-8-1 (SuperSO8 5x6) - same | PG-TDSON-8-1 (SuperSO8 5x6) - same | PG-TDSON-8-1 (SuperSO8 5x6) - same | PG-TDSON-8-1 (SuperSO8 5x6) - same | PG-TDSON-8-1 (SuperSO8 5x6) - same | PG-TDSON-8-1 (SuperSO8 5x6) - same |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Drain-Source Voltage (VDS) | 100 V | 100 V | 75 V | 100 V | 80 V | 40 V | 150 V |
| RDS(on) max at VGS=10V | 10 mΩ | 9 mΩ | 4.2 mΩ | 4 mΩ | 12.3 mΩ | 2 mΩ | 9.3 mΩ |
| Continuous Drain Current (Tc) | 90 A | 90 A | 100 A | 100 A | 90 A | 100 A | 90 A |
| Power Dissipation (Tc) | 156 W | 156 W | 156 W | 156 W | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Technology Generation | OptiMOS | OptiMOS | OptiMOS 3 | OptiMOS 5 | OptiMOS | OptiMOS | OptiMOS 5 |
| Approx. Qty-1 Price (USD, 2026-09-13) | $2.95 | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Param Match % | 100% | 90% | 80% | 90% | 80% | 70% | 70% |
Key Differentiators
- Drop-in compatible with broader Infineon OptiMOS SuperSO8 5x6 family (vs BSC090N10NS3GATMA1)
- Higher VDS rating than competing OptiMOS 3 part (vs BSC042NE7NS3GATMA1)
- Established OptiMOS generation with proven OptiMOS 5 successor available (vs BSC040N10NS5SCATMA1)
Design Notes
Estimated: At ID=30A continuous and RDS(on)=10 mΩ, conduction loss is ~9W (I²×R). On a 4-layer PCB with 1 oz copper and ~25×25 mm top-layer copper pour under the PG-TDSON-8-1 thermal pad, the resulting θJA is approximately 50°C/W, yielding a junction temperature rise of ~75°C above a 50°C ambient. This places Tj near 125°C — acceptable but tight. For continuous operation above 30A, increase copper area to 1 square inch or use forced-air cooling to maintain a >50,000-hour MTBF.
Solder the exposed thermal pad (pins 5-8 drain) to a continuous PCB copper plane with minimum 6 thermal vias (0.3 mm drill, 1 mm pitch) to inner copper layers. Place the gate-drive loop (gate resistor → MOSFET gate → driver GND) area-minimized and away from the power loop to prevent dv/dt-induced false turn-on. Use a 10-100 Ω gate resistor to control switching edge rate and reduce ringing on the gate node.
Do not drive VGS with logic-level 3.3V or 5V — the BSC100N10NSFGATMA1 requires 10V VGS to achieve the rated 10 mΩ RDS(on); under-driving will multiply conduction loss 2-3× and risk thermal runaway. Add a TVS diode or snubber across drain-source if the application has repetitive avalanche stress above 80V. Verify that the chosen gate driver can source/sink ≥1A peak current to fully switch the gate charge within 20-50 ns.
Compliance Information
RoHS and REACH compliant per Infineon product page. Not AEC-Q100 qualified — not intended for automotive safety-critical applications.
