BSC109N10NS3GATMA1 vs BSC12DN20NS3GATMA1 Comparison
Detailed side-by-side comparison of BSC109N10NS3GATMA1 by Infineon and BSC12DN20NS3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC12DN20NS3GATMA1 - 200V 11.3A N-Ch OptiMOS Power MOSFET | Infineon
BSC12DN20NS3GATMA1 ✓ ActiveSpecification Comparison
| Parameter | BSC109N10NS3GATMA1 | BSC12DN20NS3GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 100 V | 200 V |
| Continuous Drain Current (ID, Tc) | 63 A | 11.3 A |
| Power Dissipation (PD, Tc) | 78 W | 50 W |
| RDS(on) Max | 10.9 mOhm at VGS=10 V | — |
| Technology | OptiMOS 3 | OptiMOS power MOSFET |
| Package | PG-TDSON-8-1 (SuperSO8 5x6 mm) | PG-TDSON-8-5 |
| Mounting Type | Surface Mount | Surface Mount |
| Gate-Source Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | — |
| Gate Charge (Qg) | 26 nC | [DATA_NEEDED: total gate charge] |
| Operating Temperature Range | -55C to +175C | [DATA_NEEDED: operating temperature range] |
| Pin Count | 8 | 8 |
| RoHS Status | Compliant | Compliant |
| Avalanche Energy Rated | Yes | — |
| Lead-Free | Yes | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 200V |
| Transistor Type | — | N-Channel MOSFET |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: gate threshold typical] |
| On-Resistance RDS(on) | — | [DATA_NEEDED: RDS(on) at VGS=10V] |
| MSL Level | — | 1 (per JEDEC J-STD-020) |
| Configuration | — | Single N-channel |