BSC12DN20NS3GATMA1 - 200V 11.3A N-Ch OptiMOS Power MOSFET | Infineon
MPN: BSC12DN20NS3GATMA1 β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.43 | $1.43 |
| 10 | $1.28 | $12.80 |
| 100 | $1 | $100.00 |
| 500 | $0.83 | $415.00 |
| 1,000 | $0.65 | $650.00 |
| 2,000 | $0.61 | $1,220.00 |
Drop-in alternatives for BSC12DN20NS3GATMA1 β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
BSC12DN20NS3G
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BSZ12DN20NS3G
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ISC151N08NM6ATMA1
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View Datasheet βNTPF125N20G
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BSC12DN20NS3GATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Product Family | OptiMOS 200V |
| Transistor Type | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 200 V |
| Continuous Drain Current (ID, Tc) | 11.3 A |
| Power Dissipation (PD, Tc) | 50 W |
| Package | PG-TDSON-8-5 |
| Mounting Type | Surface Mount |
| Technology | OptiMOS power MOSFET |
| RoHS Status | Compliant |
| MSL Level | 1 (per JEDEC J-STD-020) |
| Configuration | Single N-channel |
| Pin Count | 8 |
BSC12DN20NS3GATMA1 Pin Configuration
| Pin 1 | SOURCE β Source terminal (connected to exposed thermal pad) |
| Pin 2 | SOURCE β Source terminal |
| Pin 3 | SOURCE β Source terminal |
| Pin 4 | GATE β Gate terminal |
| Pin 5 | NC β Not connected (no internal bond) |
| Pin 6 | DRAIN β Drain terminal |
| Pin 7 | DRAIN β Drain terminal |
| Pin 8 | DRAIN β Drain terminal |
Safe Operating Area (DC, Tc=25Β°C, package limited)
Typical Applications
BSC12DN20NS3GATMA1 is suitable for 7 applications: 48V Telecom Synchronous Rectification, Industrial DC-DC Converters, Uninterruptible Power Supplies (UPS), DC Motor Drive Inverters, Solar Power Optimizers, Server & Data-Center 48V Point-of-Load, Automotive 48V Mild-Hybrid Systems.
48V Telecom Synchronous Rectification
The BSC12DN20NS3GATMA1 is engineered for synchronous rectification in 48V telecom power stages, where its 200V VDS rating provides substantial headroom above the nominal 48V bus and absorbs 100V transient events. The OptiMOS technology delivers low Qg and low Qgd, minimizing switching loss at the 100-300 kHz frequencies typical of isolated DC-DC bricks, and the 11.3A continuous drain current covers secondary-side rectification in 600W to 1.2kW modules. The PG-TDSON-8-5 package with exposed thermal pad enables direct PCB copper heatsinking without a discrete heatsink, supporting compact quarter-brick and eighth-brick form factors. Compared with older-generation 200V MOSFETs, the OptiMOS family typically cuts total power loss by 30-50%, which directly improves telecom rectifier efficiency from 94% to 96%+.
Recommended
Industrial DC-DC Converters
Industrial DC-DC converters operating from 24V, 48V, or 72V battery and bus rails benefit from the BSC12DN20NS3GATMA1's 200V VDS rating and 11.3A continuous drain current. The OptiMOS silicon process keeps conduction loss low at full load while delivering low gate charge for high-frequency switching, enabling 200-500 kHz converter designs that shrink magnetics. The PG-TDSON-8-5 exposed-pad package simplifies PCB thermal management, and the device's avalanche rating provides margin against voltage spikes from inductive loads. Compared with a 150V MOSFET rated for the same current, the 200V part offers superior robustness against load-dump transients in automotive and industrial battery systems.
Recommended
Uninterruptible Power Supplies (UPS)
In UPS battery-side switches and low-voltage inverter stages, the BSC12DN20NS3GATMA1 serves as a robust 200V/11.3A switching element. Its avalanche energy rating and OptiMOS process deliver reliable operation under repetitive over-current events during battery-to-AC inversion transitions. The low RDS(on) of the OptiMOS family keeps conduction loss low, which extends battery runtime and improves overall UPS efficiency, while the 200V rating provides margin above 96V battery stacks and their transient overshoots. The PG-TDSON-8-5 footprint simplifies PCB layout and supports automated high-volume assembly.
Recommended
DC Motor Drive Inverters
Half-bridge and full-bridge inverters for DC motor drives in industrial automation benefit from the BSC12DN20NS3GATMA1's 200V VDS rating, 11.3A continuous drain current, and fast switching capability. The OptiMOS process minimizes switching loss in PWM motor control loops running at 20-50 kHz, reducing heatsinking requirements and enabling compact inverter PCB layouts. The PG-TDSON-8-5 package with exposed thermal pad provides low junction-to-ambient thermal resistance, supporting high-current motor phases without an external heatsink in many designs. The 200V rating also covers 96V-144V battery-powered industrial vehicles and robotic platforms.
Recommended
Solar Power Optimizers
Solar power optimizer modules operating from 40V-80V panel strings can use the BSC12DN20NS3GATMA1 as a high-side switch, benefiting from its 200V VDS headroom that absorbs DC-side transients and module-voltage spikes during partial-shading events. The low gate charge supports efficient high-frequency switching that keeps magnetics small, while the 11.3A current rating covers residential 600W-1200W optimizer form factors. The PG-TDSON-8-5 package enables direct PCB heatsinking in the IP65/IP67 encapsulated module housing.
Recommended
Server & Data-Center 48V Point-of-Load
Modern data-center architectures increasingly adopt 48V intermediate bus distribution, with secondary-side point-of-load converters stepping down to 1V-3.3V for CPUs, GPUs, and ASICs. The BSC12DN20NS3GATMA1's 200V VDS rating provides comfortable margin above the 48V bus and absorbs hot-swap transients during server insertion. Its low Qg supports the high-frequency (>500 kHz) switching required to shrink inductors and capacitors in compact POL stages, while the 11.3A continuous current covers multi-phase VR designs where several MOSFETs share the load. The PG-TDSON-8-5 exposed-pad package is compatible with high-density server PCB layouts.
Recommended
Automotive 48V Mild-Hybrid Systems
Automotive 48V mild-hybrid power systems benefit from the BSC12DN20NS3GATMA1's 200V VDS rating, which provides substantial headroom above the 48V bus and absorbs load-dump transients typical of automotive environments. The 11.3A continuous drain current suits auxiliary DC-DC converters, belt-driven starter-generators, and 48V battery management switches. The PG-TDSON-8-5 package supports reflow profiles compatible with automotive PCB assembly, though for full AEC-Q100 qualification the automotive-grade variant should be selected.
Recommended
Recommended Products Summary
Engineering reference data for BSC12DN20NS3GATMA1 β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | BSC12DN20NS3G | BSZ12DN20NS3G | ISC151N08NM6ATMA1 | BSC190N15NS3GATMA1 | IPT017N12NM6ATMA1 | NTPF125N20G |
|---|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon | onsemi |
| Package | PG-TDSON-8-5 | PG-TDSON-8-5 - same | PG-TDSON-8-5 - same | PG-TDSON-8-5 - same | PG-TDSON-8-5 - same | PG-TDSON-8-5 - same | TDSON-8 (cross-brand equivalent) |
| Drain-Source Voltage (VDS) | 200 V | 200 V | 200 V | 80 V | 150 V | 120 V | 200 V |
| Continuous Drain Current (ID, Tc) | 11.3 A | 11.3 A | 11.3 A | 150 A | 19 A | 174 A | [DATA_NEEDED] |
| Power Dissipation (PD, Tc) | 50 W | 50 W | 50 W | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Technology Family | OptiMOS 200V | OptiMOS 200V | OptiMOS 200V | OptiMOS 5 80V | OptiMOS 3 150V | OptiMOS 5 120V | onsemi N-channel MOSFET |
| Pin Compatibility | PG-TDSON-8-5 standard | Pin-for-pin identical | Pin-to-pin compatible | Pin-to-pin compatible | Pin-to-pin compatible | Pin-to-pin compatible | Footprint-compatible (verify pin mapping) |
| Unit Price (qty-1 reference) | $1.43 | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
Key Differentiators
- OptiMOS 200V process with low FOM (vs BSC190N15NS3GATMA1 (150V OptiMOS-3))
- Standardized PG-TDSON-8-5 footprint (vs ISC151N08NM6ATMA1 (80V OptiMOS-5, same package))
- Avalanche-rated and robust against inductive transients (vs NTPF125N20G (onsemi 200V TDSON-8))
Design Notes
Estimated: at PD = 50W and a typical PG-TDSON-8-5 theta_JA of approximately 60 C/W on a 1-square-inch 2-oz copper PCB, the junction temperature rises roughly 50C above ambient for every 0.83W dissipated. To stay below the 150C junction limit, keep continuous dissipation under 2W on a standard FR-4 board, or use a multi-square-inch copper pour plus thermal vias. At higher dissipation, attach a small extruded-aluminum heatsink directly to the exposed pad.
Minimize the source-inductance loop area between the MOSFET source pad, gate-driver ground return, and the gate resistor. Use a Kelvin-source pin (or dedicated gate-return trace) where possible to prevent gate-drive ringing. Place the input bulk capacitor as close as practical to the drain pad to reduce parasitic inductance, which can otherwise create VDS overshoot exceeding the 200V rating during turn-off.
Do not assume the 11.3A continuous ID rating is achievable on every PCB - it assumes 25C case temperature with infinite heatsink. Real PCB temperatures rise with current, and the RDS(on) has a positive temperature coefficient (~1.5x per 100C) that increases conduction loss further. Always derate by 30-50% from the headline ID figure, and check the SOA curve at the worst-case operating point (highest VDS, highest DC current, longest pulse width).
The fast switching edges of the OptiMOS process can generate EMI in the 30-300 MHz range. Use a small RC snubber (10 ohm + 1 nF, typical) across the drain-source to slow the turn-off edge without materially affecting efficiency. Keep gate-drive loop area minimal and use a ferrite-bead filter on the gate-driver supply if EMI compliance is critical.
Compliance Information
RoHS and REACH compliant per Infineon product-page environmental disclosure. Lead-free (Pb-free) reflow supported. MSL-1 per JEDEC J-STD-020. AEC-Q100 not applicable for the standard grade; automotive-qualified variants are ordered with separate suffixes.
