BSC109N10NS3GATMA1 vs BSC12DN20NS3GATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng BSC109N10NS3GATMA1 sa pamamagitan ng Infineon at BSC12DN20NS3GATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
BSC109N10NS3GATMA1 - 100V 63A N-Ch OptiMOS 3 MOSFET | Infineon
BSC109N10NS3GATMA1 ✓ NakahandaInfineon
BSC12DN20NS3GATMA1 - 200V 11.3A N-Ch OptiMOS Power MOSFET | Infineon
BSC12DN20NS3GATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | BSC109N10NS3GATMA1 | BSC12DN20NS3GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 100 V | 200 V |
| Continuous Drain Current (ID, Tc) | 63 A | 11.3 A |
| Power Dissipation (PD, Tc) | 78 W | 50 W |
| RDS(on) Max | 10.9 mOhm at VGS=10 V | — |
| Technology | OptiMOS 3 | OptiMOS power MOSFET |
| Packhaging | PG-TDSON-8-1 (SuperSO8 5x6 mm) | PG-TDSON-8-5 |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Gate-Source Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | — |
| Gate Charge (Qg) | 26 nC | [DATA_NEEDED: total gate charge] |
| Hanay ng Temperature na Operasyon | -55C to +175C | [DATA_NEEDED: operating temperature range] |
| Bilang ng Pin | 8 | 8 |
| Tindminan RoHS | Compliant | Compliant |
| Avalanche Energy Rated | Yes | — |
| Lead-Free | Yes | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 200V |
| Uri ng Transistor | — | N-Channel MOSFET |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: gate threshold typical] |
| On-Resistance RDS(on) | — | [DATA_NEEDED: RDS(on) at VGS=10V] |
| Level ng MSL | — | 1 (per JEDEC J-STD-020) |
| Configuration | — | Single N-channel |