BSC109N10NS3GATMA1 vs IPB35N10S3L26ATMA1 Comparison
Detailed side-by-side comparison of BSC109N10NS3GATMA1 by Infineon and IPB35N10S3L26ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC109N10NS3GATMA1 - 100V 63A N-Ch OptiMOS 3 MOSFET | Infineon
BSC109N10NS3GATMA1 β ActiveInfineon
IPB35N10S3L26ATMA1 - 100V 35A N-Ch OptiMOS-T MOSFET | Infineon
IPB35N10S3L26ATMA1 β ActiveSpecification Comparison
| Parameter | BSC109N10NS3GATMA1 | IPB35N10S3L26ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.95 | $1.15 |
| FET Type | N-Channel | β |
| Drain-Source Voltage (VDS) | 100 V | β |
| Continuous Drain Current (ID, Tc) | 63 A | β |
| Power Dissipation (PD, Tc) | 78 W | β |
| RDS(on) Max | 10.9 mOhm at VGS=10 V | β |
| Technology | OptiMOS 3 | β |
| Package | PG-TDSON-8-1 (SuperSO8 5x6 mm) | β |
| Mounting Type | Surface Mount | Surface Mount |
| Gate-Source Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | β |
| Gate Charge (Qg) | 26 nC | β |
| Operating Temperature Range | -55C to +175C | β |
| Pin Count | 8 | 3 (Gate, Drain, Source) |
| RoHS Status | Compliant | [DATA_NEEDED: RoHS status] |
| Avalanche Energy Rated | Yes | β |
| Lead-Free | Yes | β |
| Manufacturer | β | Infineon Technologies |
| Product Family | β | OptiMOS-T |
| Channel Type | β | N-Channel |
| Maximum Drain-Source Voltage (VDS) | β | 100 V |
| Continuous Drain Current (ID) at TC | β | 35 A |
| Power Dissipation (PD) at TC | β | 71 W |
| Package Type | β | PG-TO263-3 (D2PAK-2) |
| Channel Mode | β | Enhancement |
| RDS(on) (typical per Infineon product page) | β | 26.3 mΞ© |
| Typical Gate Charge Qg @ Vgs | β | 80 nC |
| Maximum Drain-Source Resistance Rds | β | 1.7 mΞ© (per RS Components listing) |
| Minimum Operating Temperature | β | -55 C |
| Maximum Power Dissipation Pd | β | 81 W (per RS Components listing) |
| AEC-Q101 Qualification | β | [DATA_NEEDED: AEC-Q101 qualification status] |