BSC146N10LS5ATMA1 vs BSC118N10NSGATMA1 Comparison

Detailed side-by-side comparison of BSC146N10LS5ATMA1 by Infineon and BSC118N10NSGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSC146N10LS5ATMA1 BSC146N10LS5ATMA1 - 100V 44A OptiMOS 5 N-MOSFET | Infineon

BSC146N10LS5ATMA1 - 100V 44A OptiMOS 5 N-MOSFET | Infineon

BSC146N10LS5ATMA1 ✓ Active

Specification Comparison

Parameter BSC146N10LS5ATMA1 BSC118N10NSGATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Technology OptiMOS 5 (logic-level) Trench MOSFET
Polarity / Channel Type N-Channel —
Drain-Source Voltage (VDS) max 100 V —
Continuous Drain Current (ID) at Tc=25 C 44 A —
Pulsed Drain Current (ID,pulse) [DATA_NEEDED: IDM] —
RDS(on) max at VGS=10 V 14.6 mOhm —
RDS(on) max at VGS=4.5 V [DATA_NEEDED: RDS(on) at 4.5 V] —
Gate-Source Voltage (VGS) max ±20 V —
Gate Threshold Voltage (VGS(th)) Logic-level (typ. ~1.7 V) —
Power Dissipation (Ta) 2.5 W —
Power Dissipation (Tc) 52 W —
Operating Temperature Range -55 C to +150 C (TJ max) —
Package PG-TDSON-8-6 (SuperSO8 5x6 mm) PG-TDSON-8-1 (TDSON EP, 5x6 mm)
Mounting Type Surface Mount Surface Mount
MSL Level 1 (per JEDEC J-STD-020) —
RoHS Status Compliant Compliant
Avalanche Energy (EAS) [DATA_NEEDED: EAS] —
Manufacturer — Infineon Technologies
Product Family — OptiMOS 2
FET Type — N-Channel
Mode — Enhancement (Normal Level)
Drain-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID) at Ta=25C — 11 A
Continuous Drain Current (ID) at Tc=25C — 71 A
Power Dissipation (PD) at Tc=25C — 114 W
Operating Junction Temperature — -55 C to +150 C
Lead Plating — Pb-free
Halogen Free — Yes
JEDEC Qualification — Qualified per target application
Target Application — High-frequency SMPS, synchronous rectification
Gate Charge x RDS(on) FOM — Excellent (per datasheet)

Datasheets & Resources

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