BSC146N10LS5ATMA1 vs BSC118N10NSGATMA1 Comparison
Detailed side-by-side comparison of BSC146N10LS5ATMA1 by Infineon and BSC118N10NSGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC146N10LS5ATMA1
BSC146N10LS5ATMA1 - 100V 44A OptiMOS 5 N-MOSFET | Infineon
BSC146N10LS5ATMA1 β ActiveInfineon
BSC118N10NSGATMA1
BSC118N10NSGATMA1 - 100V 71A N-Channel OptiMOS MOSFET | Infineon
BSC118N10NSGATMA1 β ActiveSpecification Comparison
| Parameter | BSC146N10LS5ATMA1 | BSC118N10NSGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.74 | $0.78 |
| Technology | OptiMOS 5 (logic-level) | Trench MOSFET |
| Polarity / Channel Type | N-Channel | β |
| Drain-Source Voltage (VDS) max | 100 V | β |
| Continuous Drain Current (ID) at Tc=25 C | 44 A | β |
| Pulsed Drain Current (ID,pulse) | [DATA_NEEDED: IDM] | β |
| RDS(on) max at VGS=10 V | 14.6 mOhm | β |
| RDS(on) max at VGS=4.5 V | [DATA_NEEDED: RDS(on) at 4.5 V] | β |
| Gate-Source Voltage (VGS) max | Β±20 V | β |
| Gate Threshold Voltage (VGS(th)) | Logic-level (typ. ~1.7 V) | β |
| Power Dissipation (Ta) | 2.5 W | β |
| Power Dissipation (Tc) | 52 W | β |
| Operating Temperature Range | -55 C to +150 C (TJ max) | β |
| Package | PG-TDSON-8-6 (SuperSO8 5x6 mm) | PG-TDSON-8-1 (TDSON EP, 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 1 (per JEDEC J-STD-020) | β |
| RoHS Status | Compliant | Compliant |
| Avalanche Energy (EAS) | [DATA_NEEDED: EAS] | β |
| Manufacturer | β | Infineon Technologies |
| Product Family | β | OptiMOS 2 |
| FET Type | β | N-Channel |
| Mode | β | Enhancement (Normal Level) |
| Drain-Source Voltage (VDS) | β | 100 V |
| Continuous Drain Current (ID) at Ta=25C | β | 11 A |
| Continuous Drain Current (ID) at Tc=25C | β | 71 A |
| Power Dissipation (PD) at Tc=25C | β | 114 W |
| Operating Junction Temperature | β | -55 C to +150 C |
| Lead Plating | β | Pb-free |
| Halogen-Free | β | Yes |
| JEDEC Qualification | β | Qualified per target application |
| Target Application | β | High-frequency SMPS, synchronous rectification |
| Gate Charge x RDS(on) FOM | β | Excellent (per datasheet) |