BSC146N10LS5ATMA1 vs BSC118N10NSGATMA1 Perbandingan

Perbandingan bersamaan detil BSC146N10LS5ATMA1 dari Infineon dan BSC118N10NSGATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
BSC146N10LS5ATMA1 BSC146N10LS5ATMA1 - 100V 44A OptiMOS 5 N-MOSFET | Infineon

BSC146N10LS5ATMA1 - 100V 44A OptiMOS 5 N-MOSFET | Infineon

BSC146N10LS5ATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum BSC146N10LS5ATMA1 BSC118N10NSGATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Technology OptiMOS 5 (logic-level) Trench MOSFET
Polarity / Channel Type N-Channel —
Drain-Source Voltage (VDS) max 100 V —
Continuous Drain Current (ID) at Tc=25 C 44 A —
Pulsed Drain Current (ID,pulse) [DATA_NEEDED: IDM] —
RDS(on) max at VGS=10 V 14.6 mOhm —
RDS(on) max at VGS=4.5 V [DATA_NEEDED: RDS(on) at 4.5 V] —
Gate-Source Voltage (VGS) max ±20 V —
Gate Threshold Voltage (VGS(th)) Logic-level (typ. ~1.7 V) —
Power Dissipation (Ta) 2.5 W —
Power Dissipation (Tc) 52 W —
Rentang Suhu Kerja -55 C to +150 C (TJ max) —
Paket PG-TDSON-8-6 (SuperSO8 5x6 mm) PG-TDSON-8-1 (TDSON EP, 5x6 mm)
Tipe Mounting Surface Mount Surface Mount
Level MSL 1 (per JEDEC J-STD-020) —
Status RoHS Compliant Compliant
Avalanche Energy (EAS) [DATA_NEEDED: EAS] —
Manufacturer — Infineon Technologies
Product Family — OptiMOS 2
FET Type — N-Channel
Mode — Enhancement (Normal Level)
Drain-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID) at Ta=25C — 11 A
Continuous Drain Current (ID) at Tc=25C — 71 A
Power Dissipation (PD) at Tc=25C — 114 W
Suhu Hubung Kerja — -55 C to +150 C
Lead Plating — Pb-free
Bebas Halogen — Yes
JEDEC Qualification — Qualified per target application
Target Application — High-frequency SMPS, synchronous rectification
Gate Charge x RDS(on) FOM — Excellent (per datasheet)

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