BSC146N10LS5ATMA1 vs BSC118N10NSGATMA1 比較
詳細並排比較 BSC146N10LS5ATMA1 由 Infineon 與 BSC118N10NSGATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | BSC146N10LS5ATMA1 | BSC118N10NSGATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Technology | OptiMOS 5 (logic-level) | Trench MOSFET |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) max | 100 V | — |
| Continuous Drain Current (ID) at Tc=25 C | 44 A | — |
| Pulsed Drain Current (ID,pulse) | [DATA_NEEDED: IDM] | — |
| RDS(on) max at VGS=10 V | 14.6 mOhm | — |
| RDS(on) max at VGS=4.5 V | [DATA_NEEDED: RDS(on) at 4.5 V] | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | Logic-level (typ. ~1.7 V) | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Power Dissipation (Tc) | 52 W | — |
| 工作溫度範圍 | -55 C to +150 C (TJ max) | — |
| 封裝 | PG-TDSON-8-6 (SuperSO8 5x6 mm) | PG-TDSON-8-1 (TDSON EP, 5x6 mm) |
| 安裝類型 | Surface Mount | Surface Mount |
| MSL 等級 | 1 (per JEDEC J-STD-020) | — |
| RoHS 狀態 | Compliant | Compliant |
| Avalanche Energy (EAS) | [DATA_NEEDED: EAS] | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 2 |
| FET Type | — | N-Channel |
| Mode | — | Enhancement (Normal Level) |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) at Ta=25C | — | 11 A |
| Continuous Drain Current (ID) at Tc=25C | — | 71 A |
| Power Dissipation (PD) at Tc=25C | — | 114 W |
| 工作接面溫度 | — | -55 C to +150 C |
| Lead Plating | — | Pb-free |
| 無鹵素 | — | Yes |
| JEDEC Qualification | — | Qualified per target application |
| Target Application | — | High-frequency SMPS, synchronous rectification |
| Gate Charge x RDS(on) FOM | — | Excellent (per datasheet) |