BSC360N15NS3GATMA1 vs BSC0911NDATMA1 Comparison

Detailed side-by-side comparison of BSC360N15NS3GATMA1 by Infineon and BSC0911NDATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSC360N15NS3GATMA1

BSC360N15NS3GATMA1 - 150V 36mOhm N-Channel OptiMOS MOSFET | Infineon

BSC360N15NS3GATMA1 βœ“ Active
Infineon
BSC0911NDATMA1

BSC0911NDATMA1 - 25V Dual N-Channel MOSFET Array | Infineon

BSC0911NDATMA1 βœ“ Active

Specification Comparison

Parameter BSC360N15NS3GATMA1 BSC0911NDATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.82 $0.46
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSC360N15NS3GATMA1 β€”
Technology OptiMOS 3 (N-Channel Trench MOSFET) OptiMOS trench MOSFET
Drain-Source Voltage (VDS) 150 V 25 V
Continuous Drain Current (ID) at Tc 33 A β€”
On-Resistance RDS(on) max at VGS=10V 36 mOhm β€”
Power Dissipation (PD) at Tc 74 W β€”
Gate Threshold Voltage (VGS th) typ 3.0 V β€”
Total Gate Charge (Qg) typ [DATA_NEEDED: Qg value] β€”
Package PG-TDSON-8-1 (SuperSO8, 5x6 mm) PG-TISON-8 (8-PowerTDFN)
Mounting Type Surface Mount Surface Mount
Operating Temperature Range -55Β°C to +150Β°C (junction) β€”
Avalanche Energy Rated Yes β€”
RoHS Status Compliant Compliant
Lead-Free Yes β€”
MSL Level 1 [DATA_NEEDED: MSL rating]
Product Family β€” OptiMOS 25V
Configuration β€” Dual N-Channel (2 N-CH)
Continuous Drain Current (ID) β€” 18 A
Pulsed Drain Current (IDM) β€” 30 A
Power Dissipation (PD) β€” 1 W
Operating Temperature β€” -55C to +150C (junction)
Channel Type β€” N-Channel Enhancement Mode
Gate Threshold (VGS(th)) β€” [DATA_NEEDED: gate threshold voltage]
RDS(on) max @ VGS=10V β€” [DATA_NEEDED: RDS(on) at 10V VGS]
Total Gate Charge (Qg) β€” [DATA_NEEDED: total gate charge]

Datasheets & Resources

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