BSC360N15NS3GATMA1 vs BSC0911NDATMA1 Perbandingan
Perbandingan bersamaan detil BSC360N15NS3GATMA1 dari Infineon dan BSC0911NDATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
BSC360N15NS3GATMA1 - 150V 36mOhm N-Channel OptiMOS MOSFET | Infineon
BSC360N15NS3GATMA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | BSC360N15NS3GATMA1 | BSC0911NDATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSC360N15NS3GATMA1 | — |
| Technology | OptiMOS 3 (N-Channel Trench MOSFET) | OptiMOS trench MOSFET |
| Drain-Source Voltage (VDS) | 150 V | 25 V |
| Continuous Drain Current (ID) at Tc | 33 A | — |
| On-Resistance RDS(on) max at VGS=10V | 36 mOhm | — |
| Power Dissipation (PD) at Tc | 74 W | — |
| Gate Threshold Voltage (VGS th) typ | 3.0 V | — |
| Total Gate Charge (Qg) typ | [DATA_NEEDED: Qg value] | — |
| Paket | PG-TDSON-8-1 (SuperSO8, 5x6 mm) | PG-TISON-8 (8-PowerTDFN) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Rentang Suhu Kerja | -55°C to +150°C (junction) | — |
| Avalanche Energy Rated | Yes | — |
| Status RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Level MSL | 1 | [DATA_NEEDED: MSL rating] |
| Product Family | — | OptiMOS 25V |
| Configuration | — | Dual N-Channel (2 N-CH) |
| Continuous Drain Current (ID) | — | 18 A |
| Pulsed Drain Current (IDM) | — | 30 A |
| Power Dissipation (PD) | — | 1 W |
| Suhu Kerja | — | -55C to +150C (junction) |
| Channel Type | — | N-Channel Enhancement Mode |
| Gate Threshold (VGS(th)) | — | [DATA_NEEDED: gate threshold voltage] |
| RDS(on) max @ VGS=10V | — | [DATA_NEEDED: RDS(on) at 10V VGS] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge] |