BSC520N15NS3 vs CSD19534Q5A Comparison
Detailed side-by-side comparison of BSC520N15NS3 by Infineon and CSD19534Q5A by Texas Instruments. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Texas Instruments
CSD19534Q5A - 100V NexFET N-Channel MOSFET | Texas Instruments
CSD19534Q5A ✓ ActiveSpecification Comparison
| Parameter | BSC520N15NS3 | CSD19534Q5A |
|---|---|---|
| Brand | Infineon | Texas Instruments |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.71 | $0.62 |
| Technology | OptiMOS 3, N-channel trench MOSFET | NexFET (Power MOSFET) |
| Drain-Source Voltage (VDS) | 150 V | — |
| Continuous Drain Current (ID, TC=25C) | 21 A | — |
| Pulsed Drain Current (IDM) | 84 A | — |
| On-State Resistance RDS(on) max (VGS=10V) | 52 mOhm | — |
| Gate-Source Voltage VGS max | +/- 20 V | — |
| Gate Threshold Voltage VGS(th) typ | 3 V | — |
| Power Dissipation (TC=25C) | 57 W | — |
| Operating Junction Temperature | -55C to +150C | — |
| Package | PG-TDSON-8-5 (SuperSO8, 5x6 mm) | 8-VSONP (5x6 mm) with exposed pad |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 1 | 1-260C-UNLIM |
| RoHS Status | Compliant | Compliant |
| Avalanche Energy Rated | Yes (single-pulse) | — |
| Body Diode | Intrinsic, avalanche-rated | — |
| FET Type | — | N-Channel |
| Drain-to-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) at Tc | — | 44 A |
| On-Resistance RDS(on) | — | 12.6 mΩ (typ per datasheet description) |
| Power Dissipation (Ta) | — | 3.2 W |
| Power Dissipation (Tc) | — | 63 W |
| Operating Temperature Range | — | [DATA_NEEDED: operating temperature range] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical/min/max] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg at VGS=10V] |
| Pin Count | — | 8 |