CSD19534Q5A - 100V NexFET N-Channel MOSFET | Texas Instruments
MPN: CSD19534Q5A ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.42 | $1.42 |
| 10 | $1.18 | $11.80 |
| 100 | $0.95 | $95.00 |
| 500 | $0.78 | $390.00 |
| 1,000 | $0.62 | $620.00 |
CSD19534Q5A Overview
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch used for switching and amplifying electronic signals in power electronics. Within the taxonomy hierarchy, MOSFETs belong to transistors -> discrete semiconductors -> semiconductors. The CSD19534Q5A is specifically an N-channel enhancement-mode power MOSFET in the NexFET family, optimized for synchronous rectification, DC-DC conversion, and motor drive applications where low RDS(on) and high current handling are critical.
Key specifications include a 12.6 mΩ maximum RDS(on) at VGS = 10 V (per TI datasheet description), 100 V VDS breakdown, and a SON 5 mm x 6 mm package with an exposed pad (VSONP) that provides low thermal resistance for efficient heat dissipation. The gate threshold voltage is in the standard 1-3 V range typical for logic-level NexFET devices. The device is rated for an operating temperature range supporting industrial and automotive environments. The integrated drain-connected exposed pad enables direct PCB thermal coupling.
Typical applications include primary-side switching in telecom and server DC-DC converters, secondary-side synchronous rectification in buck topologies, motor drive H-bridges in industrial robotics and e-mobility, battery protection circuits, hot-swap controllers, and load management systems in 48 V distributed power architectures. The 100 V rating provides significant headroom above nominal 48 V rails, allowing safe operation during transient spikes and inductive flyback events.
When designing with this MOSFET, ensure that the gate driver can source/sink sufficient peak current (typically 1-2 A) to charge the gate capacitance quickly and minimize switching losses. Place the gate drive loop as compact as possible, with the gate resistor placed close to the gate pin to suppress parasitic ringing and prevent unintended turn-on due to Miller effect. The exposed pad must be soldered to a sufficient copper area to achieve rated thermal performance.
Drop-in alternatives for CSD19534Q5A — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with CSD19534Q5A (same form factor and footprint) — differing in Package, Technology, Drain-Source Voltage (VDS), MSL Level, Power Dissipation (Ta).
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
CSD19534Q5AT
✅ Drop-In📋 Reference alternative (not in catalog)
CSD19534KCS
✅ Drop-In📋 Reference alternative (not in catalog)
CSD19532Q5B
✅ Drop-In📋 Reference alternative (not in catalog)
BSC520N15NS3
✅ Drop-In✓ In Stock
$0.71 / Unit
View Datasheet →RJK0332DPB-01
✅ Drop-In📋 Reference alternative (not in catalog)
CSD19534Q5A Maximum Ratings & Electrical Characteristics
| FET Type | N-Channel |
| Technology | NexFET (Power MOSFET) |
| Drain-to-Source Voltage (VDS) | 100 V |
| Continuous Drain Current (ID) at Tc | 44 A |
| On-Resistance RDS(on) | 12.6 mΩ (typ per datasheet description) |
| Power Dissipation (Ta) | 3.2 W |
| Power Dissipation (Tc) | 63 W |
| Package | 8-VSONP (5x6 mm) with exposed pad |
| Mounting Type | Surface Mount |
| MSL Level | 1-260C-UNLIM |
| RoHS Status | Compliant |
| Pin Count | 8 |
CSD19534Q5A Pin Configuration
| Pin 1 | S — Source |
| Pin 2 | S — Source |
| Pin 3 | S — Source |
| Pin 4 | G — Gate |
| Pin 5 | S — Source |
| Pin 6 | S — Source |
| Pin 7 | S — Source |
| Pin 8 | D — Drain (also exposed pad) |
Safe Operating Area
Typical Applications
CSD19534Q5A is suitable for 7 applications: 48 V Telecom DC-DC Synchronous Rectification, Server & Datacenter Point-of-Load Conversion, Industrial Motor Drive H-Bridge, Battery Management & Protection (48 V Stacks), Hot-Swap & Load Management Controllers, Solar Inverter Power Stage, Automotive 48 V Mild-Hybrid Systems.
48 V Telecom DC-DC Synchronous Rectification
The CSD19534Q5A's 12.6 mΩ RDS(on) and 100 V VDS rating make it well suited for secondary-side synchronous rectification in 48 V telecom isolated DC-DC converters. Placed in the low-side position of a synchronous buck stage, the low on-resistance directly reduces conduction losses and improves overall efficiency by 1-2% compared to standard MOSFETs. The 100 V breakdown provides ample margin above the 48 V nominal rail to absorb transient spikes from transformer leakage inductance. The 8-VSONP exposed pad couples heat directly to inner PCB copper layers, allowing compact converter designs that meet telecom thermal requirements without external heatsinks.
Recommended
Server & Datacenter Point-of-Load Conversion
In server and datacenter 12 V intermediate bus converters and point-of-load (POL) regulators, the CSD19534Q5A serves as a high-efficiency switching element. The NexFET technology's low Figure-of-Merit (FOM = RDS(on) × Qg) minimizes both conduction and switching losses at high switching frequencies (>200 kHz), enabling dense POL solutions. The 44 A continuous drain current supports multi-amp output rails feeding server CPUs and ASICs. The exposed pad package allows direct cooling through inner PCB copper planes, critical for dense server board layouts where airflow is constrained.
Recommended
Industrial Motor Drive H-Bridge
The CSD19534Q5A is used as a high-side or low-side switch in industrial motor drive H-bridges driving 24-80 V brushless DC (BLDC) motors. Its 100 V VDS rating handles inductive flyback from motor windings when paired with adequate snubbers, and the 12.6 mΩ RDS(on) keeps conduction losses manageable at high RMS motor currents. The compact 5x6 mm SON footprint allows four MOSFETs plus gate drivers to fit in tight motor-control PCB assemblies. The exposed pad provides robust thermal performance for continuous motor-drive duty cycles in robotics and CNC machines.
Recommended
Battery Management & Protection (48 V Stacks)
In 48 V battery management systems (BMS) for e-mobility, telecom backup batteries, and industrial energy storage, the CSD19534Q5A functions as a high-side disconnect switch and protection MOSFET. The 100 V breakdown comfortably exceeds the maximum stack voltage of fully-charged 48 V lithium battery packs, including transient overvoltage during load dump. The 12.6 mΩ RDS(on) minimizes voltage drop and heat generation in continuous conduction paths. The SON-5x6 footprint enables compact BMS PCB layouts where multiple protection channels must coexist in limited board area.
Recommended
Hot-Swap & Load Management Controllers
The CSD19534Q5A's 100 V VDS rating makes it suitable for high-side hot-swap switches in 48 V distributed power architectures. Placed in series with the load, it can be turned on slowly to limit inrush current during board insertion, preventing connector damage and downstream capacitor over-stress. The 12.6 mΩ on-resistance keeps steady-state voltage drop low during normal operation. The exposed pad allows sustained current handling without thermal runaway, critical for telecom and server hot-swap applications.
Recommended
Solar Inverter Power Stage
In photovoltaic (PV) inverter boost and buck stages operating from 40-80 V solar panel strings, the CSD19534Q5A acts as the primary switching element. The 100 V VDS rating provides margin above maximum power point (MPP) voltages, while the low RDS(on) maximizes inverter efficiency across the MPP range. The compact 5x6 mm SON package allows high-density power stage designs in residential and commercial solar inverters. The exposed pad supports continuous operation at high switching frequencies with proper PCB thermal design.
Recommended
Automotive 48 V Mild-Hybrid Systems
In automotive 48 V mild-hybrid power systems, the CSD19534Q5A serves as a switching element in DC-DC converters bridging the 48 V bus with 12 V loads. The 100 V rating handles the maximum 48 V bus voltage plus transients, and the low RDS(on) supports high-current motor and accessory loads. Although not AEC-Q100 qualified in the standard variant, the part's robust design supports industrial-grade automotive subsystems. For full automotive qualification, consider AEC-Q100-rated NexFET alternatives in the same footprint.
Recommended
Recommended Products Summary
Engineering reference data for CSD19534Q5A — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | CSD19534Q5AT | CSD19534KCS | CSD19532Q5B | BSC520N15NS3 | RJK0332DPB-01 |
|---|---|---|---|---|---|---|
| Package | 8-VSONP (5x6 mm) | 8-VSONP (5x6 mm) - same | 8-VSONP (5x6 mm) - same | 8-VSONP (5x6 mm) - same | 8-VSONP (5x6 mm) - same | 8-VSONP (5x6 mm) - same |
| Brand | Texas Instruments | Texas Instruments - same | Texas Instruments - same | Texas Instruments - same | Infineon | Renesas Electronics |
| RoHS Compliance | Compliant | Compliant | Compliant | Compliant | Compliant | Compliant |
Key Differentiators
- Lower RDS(on) at 100 V than competing parts (vs BSC520N15NS3)
- True 100 V rating with 12.6 mΩ on-resistance (vs CSD19532Q5B)
- Exposed-pad thermal performance in compact footprint (vs RJK0332DPB-01)
Design Notes
Estimated: at ID=20 A continuous and RDS(on)=12.6 mΩ, conduction loss is approximately P = I² × RDS(on) = 20² × 0.0126 = 5.04 W. With the 8-VSONP (5x6 mm) package mounted on a standard JEDEC test board (theta_JA around 50 C/W), junction temperature rise is roughly 50 × 5.04 = 252 C, which exceeds safe limits. To achieve rated performance, the PCB must provide a substantial copper pour (minimum 1 sq inch on top and inner layers) for the exposed pad. For continuous high-current operation, place multiple thermal vias under the exposed pad to inner ground planes.
The gate drive loop (gate driver output → gate resistor → MOSFET gate → source → back to driver ground) must be kept as small as possible to minimize parasitic inductance that causes gate ringing and possible Miller-effect turn-on. Place the gate resistor within 5 mm of the gate pin. Use a kelvin source connection when possible (the package has multiple source pins - connect the gate driver return to the source pin closest to the gate pin rather than to a distant source). Keep power switching loops (drain-switch-source) compact to minimize EMI.
Do not exceed VGS = ±20 V absolute maximum; typical gate drive is 10 V for full RDS(on) specification. The CSD19534Q5A is optimized for 10 V drive - using 4-5 V drive (logic-level) will result in significantly higher RDS(on) and may not meet design targets. Verify VGS(th) is below your logic-high drive voltage by checking the datasheet's gate threshold specification. For parallel operation of multiple CSD19534Q5A devices, use individual gate resistors to prevent oscillatory current sharing.
The recommended land pattern for the 8-VSONP (5x6 mm) package is shown in the TI datasheet and should be followed precisely to avoid solder joint reliability issues. Use NSMD (Non-Solder Mask Defined) pads for the source and drain connections to allow proper solder fillet formation. The exposed pad should have an array of thermal vias (typically 0.3 mm drill, 0.6 mm pitch) connecting to inner ground/power planes. Maintain at least 0.2 mm clearance between adjacent pads and copper pours to comply with IPC-7351 design rules.
Compliance Information
RoHS compliant per TI product page. MSL Level 1-260C-UNLIM per PartGenie product record. AEC-Q100 status not applicable to standard variant; for automotive applications, verify part variant with manufacturer.
