BSC520N15NS3 vs CSD19534Q5A Vergleich
Detaillierter Direktvergleich von BSC520N15NS3 von Infineon und CSD19534Q5A von Texas Instruments. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Texas Instruments
CSD19534Q5A - 100V NexFET N-Channel MOSFET | Texas Instruments
CSD19534Q5A ✓ AktivSpezifikationsvergleich
| Parameter | BSC520N15NS3 | CSD19534Q5A |
|---|---|---|
| Marke | Infineon | Texas Instruments |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,71 | $0,62 |
| Technology | OptiMOS 3, N-channel trench MOSFET | NexFET (Power MOSFET) |
| Drain-Source Voltage (VDS) | 150 V | — |
| Continuous Drain Current (ID, TC=25C) | 21 A | — |
| Pulsed Drain Current (IDM) | 84 A | — |
| On-State Resistance RDS(on) max (VGS=10V) | 52 mOhm | — |
| Gate-Source Voltage VGS max | +/- 20 V | — |
| Gate Threshold Voltage VGS(th) typ | 3 V | — |
| Power Dissipation (TC=25C) | 57 W | — |
| Betriebs-Sperrschichttemperatur | -55C to +150C | — |
| Gehäuse | PG-TDSON-8-5 (SuperSO8, 5x6 mm) | 8-VSONP (5x6 mm) with exposed pad |
| Montageart | Surface Mount | Surface Mount |
| MSL-Level | 1 | 1-260C-UNLIM |
| RoHS-Status | Compliant | Compliant |
| Avalanche Energy Rated | Yes (single-pulse) | — |
| Body Diode | Intrinsic, avalanche-rated | — |
| FET Type | — | N-Channel |
| Drain-to-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) at Tc | — | 44 A |
| On-Resistance RDS(on) | — | 12.6 mΩ (typ per datasheet description) |
| Power Dissipation (Ta) | — | 3.2 W |
| Power Dissipation (Tc) | — | 63 W |
| Betriebstemperaturbereich | — | [DATA_NEEDED: operating temperature range] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical/min/max] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg at VGS=10V] |
| Pin-Anzahl | — | 8 |