BSG0813NDIATMA1 vs BSC019N04LSTATMA1 Perbandingan

Perbandingan bersamaan detil BSG0813NDIATMA1 dari Infineon dan BSC019N04LSTATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSG0813NDIATMA1 BSC019N04LSTATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Series OptiMOS 5 Power Block —
FET Type N-Channel MOSFET Array (half-bridge / synchronous buck) —
Configuration High-side + Low-side, integrated —
Drain-Source Voltage (VDS) 25 V 40 V
Low-Side Continuous Drain Current (ID) 19 A —
High-Side Continuous Drain Current (ID) 33 A —
Power Dissipation (PD) 2.5 W —
Paket PG-TISON-8 (5.0 x 6.0 mm) TDSON-8 (SuperSO8) 5x6 mm
Tipe Mounting Surface Mount Surface Mount
Rentang Suhu Kerja [DATA_NEEDED: operating temperature range] -55 C to +150 C
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) value] —
RDS(on) - Low-Side [DATA_NEEDED: RDS(on) low-side @ VGS] —
RDS(on) - High-Side [DATA_NEEDED: RDS(on) high-side @ VGS] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg total] —
Technology Generation OptiMOS 5 —
Status RoHS Compliant Compliant
Level MSL 1 (per JEDEC J-STD-020) 1 (unlimited)
Topologi Synchronous buck half-bridge —
Technology — OptiMOS 5 (N-channel trench MOSFET)
Continuous Drain Current (ID, Tc=25C) — 161 A
Continuous Drain Current (ID, Ta=25C) — 28 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed ID limit]
On-Resistance RDS(on) max @ VGS=10V — 1.9 mOhm
On-Resistance RDS(on) max @ VGS=4.5V — [DATA_NEEDED: RDS(on) at 4.5V]
Gate Threshold Voltage VGS(th) typ — 1.7 V
Total Gate Charge Qg typ — 85 nC
Power Dissipation PD (Tc=25C) — 94 W
Lead-Free / Halogen-Free — Yes / Yes
Avalanche Rated — Yes

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