BSG0813NDIATMA1 vs BSC019N04LSTATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSG0813NDIATMA1 disebabkan oleh Infineon dan BSC019N04LSTATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSG0813NDIATMA1 BSC019N04LSTATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Series OptiMOS 5 Power Block —
FET Type N-Channel MOSFET Array (half-bridge / synchronous buck) —
Configuration High-side + Low-side, integrated —
Drain-Source Voltage (VDS) 25 V 40 V
Low-Side Continuous Drain Current (ID) 19 A —
High-Side Continuous Drain Current (ID) 33 A —
Power Dissipation (PD) 2.5 W —
Kemasan PG-TISON-8 (5.0 x 6.0 mm) TDSON-8 (SuperSO8) 5x6 mm
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi [DATA_NEEDED: operating temperature range] -55 C to +150 C
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) value] —
RDS(on) - Low-Side [DATA_NEEDED: RDS(on) low-side @ VGS] —
RDS(on) - High-Side [DATA_NEEDED: RDS(on) high-side @ VGS] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg total] —
Technology Generation OptiMOS 5 —
Status RoHS Compliant Compliant
Aras MSL 1 (per JEDEC J-STD-020) 1 (unlimited)
Tetstruktur Synchronous buck half-bridge —
Technology — OptiMOS 5 (N-channel trench MOSFET)
Continuous Drain Current (ID, Tc=25C) — 161 A
Continuous Drain Current (ID, Ta=25C) — 28 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed ID limit]
On-Resistance RDS(on) max @ VGS=10V — 1.9 mOhm
On-Resistance RDS(on) max @ VGS=4.5V — [DATA_NEEDED: RDS(on) at 4.5V]
Gate Threshold Voltage VGS(th) typ — 1.7 V
Total Gate Charge Qg typ — 85 nC
Power Dissipation PD (Tc=25C) — 94 W
Lead-Free / Halogen-Free — Yes / Yes
Avalanche Rated — Yes

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