BSO150N03MDGXUMA1 vs BSZ036NE2LSATMA1 Perbandingan
Perbandingan bersamaan detil BSO150N03MDGXUMA1 dari Infineon dan BSZ036NE2LSATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
BSO150N03MDGXUMA1 - 30V Dual N-Channel MOSFET, 9.3A, OptiMOS 3M | Infineon
BSO150N03MDGXUMA1 ✓ Aktif
Perbandingan Spesifikasi
| Parameter Umum | BSO150N03MDGXUMA1 | BSZ036NE2LSATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSO150N03MDGXUMA1 | — |
| Product Type | Dual N-Channel MOSFET Array | — |
| Technology | OptiMOS 3M (30V trench MOSFET) | — |
| Drain-Source Voltage (VDS) max | 30 V | — |
| Continuous Drain Current (ID) max per channel | 9.3 A | — |
| On-State Resistance (RDS(on)) max | 15 mOhm at VGS=10V | — |
| Gate-Source Voltage (VGS) max | 20 V | — |
| Gate Threshold Voltage (VGS(th)) typ | 1.0 V | — |
| Power Dissipation (PD) max | 1.4 W | — |
| Rentang Suhu Kerja | -55C to +150C | -55C to +150C |
| Paket | PG-DSO-8 (SO-8 with exposed pad) | PG-TSDSON-8-FL (5x6 mm) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Level MSL | 1 (unlimited) | 1 (Unlimited) |
| Status RoHS | Compliant | Compliant |
| Channel Configuration | Dual N-Channel (independent) | — |
| Product Family | — | OptiMOS 25V |
| Polarity / Channel Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 25 V |
| Continuous Drain Current (ID) at TA=25C | — | 16 A |
| Continuous Drain Current (ID) at TC=25C | — | 40 A |
| Power Dissipation (PD) at TA=25C | — | 2.1 W |
| Power Dissipation (PD) at TC=25C | — | 37 W |
| Configuration | — | Single |
| Lead-Free | — | Yes |
| Gate Drive | — | Logic-level compatible |