BSO150N03MDGXUMA1 vs BSZ036NE2LSATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng BSO150N03MDGXUMA1 sa pamamagitan ng Infineon at BSZ036NE2LSATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro BSO150N03MDGXUMA1 BSZ036NE2LSATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSO150N03MDGXUMA1 —
Product Type Dual N-Channel MOSFET Array —
Technology OptiMOS 3M (30V trench MOSFET) —
Drain-Source Voltage (VDS) max 30 V —
Continuous Drain Current (ID) max per channel 9.3 A —
On-State Resistance (RDS(on)) max 15 mOhm at VGS=10V —
Gate-Source Voltage (VGS) max 20 V —
Gate Threshold Voltage (VGS(th)) typ 1.0 V —
Power Dissipation (PD) max 1.4 W —
Hanay ng Temperature na Operasyon -55C to +150C -55C to +150C
Packhaging PG-DSO-8 (SO-8 with exposed pad) PG-TSDSON-8-FL (5x6 mm)
Uri ng Pagpapasok Surface Mount Surface Mount
Level ng MSL 1 (unlimited) 1 (Unlimited)
Tindminan RoHS Compliant Compliant
Channel Configuration Dual N-Channel (independent) —
Product Family — OptiMOS 25V
Polarity / Channel Type — N-Channel
Drain-Source Voltage (VDS) — 25 V
Continuous Drain Current (ID) at TA=25C — 16 A
Continuous Drain Current (ID) at TC=25C — 40 A
Power Dissipation (PD) at TA=25C — 2.1 W
Power Dissipation (PD) at TC=25C — 37 W
Configuration — Single
Lead-Free — Yes
Gate Drive — Logic-level compatible

Mga Datasheets at Resources

Tingnan ang Lahat ng mga Produkto Lumikha ng BOM Hilingin ang Kita