BSP125H6327XTSA1 vs BSP135H6906XTSA1 Comparison
Detailed side-by-side comparison of BSP125H6327XTSA1 by Infineon and BSP135H6906XTSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | BSP125H6327XTSA1 | BSP135H6906XTSA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.38 | $0.78 |
| Manufacturer | Infineon Technologies | β |
| Part Number | BSP125H6327XTSA1 | β |
| Transistor Type | N-Channel MOSFET | β |
| Technology | SIPMOS (Small Signal Power MOSFET) | SIPMOS (planar high-voltage) |
| Drain-Source Voltage (VDS) | 600 V | β |
| Continuous Drain Current (ID) | 120 mA (Ta) | β |
| Power Dissipation (PD) | 1.8 W (Ta) | β |
| Package | PG-SOT223-4 (SOT-223-3 + tab) | PG-SOT223-4 (SOT-223, 3+tab) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature | -55C to +150C (TJ) | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | β |
| On-Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) at VGS=10V] | β |
| Configuration | Single | β |
| Channel Mode | Enhancement | β |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 (Unlimited) | 1 (unlimited) |
| Qualification | Automotive / Industrial grade | β |
| FET Type | β | N-Channel Depletion Mode |
| Drain-Source Voltage (VDS) Max | β | 600 V |
| Continuous Drain Current (ID) at TA=25C | β | 120 mA |
| RDS(on) Max at VGS=0V | β | 45 Ohm |
| Power Dissipation (PD) Max | β | 1.8 W |
| Gate-Source Voltage (VGS) Max | β | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(off)) | β | Depletion mode (normally-on) |
| Operating Temperature Range | β | -55C to +150C |
| Pin Count | β | 4 (3 leads + drain tab) |
| Automotive Qualification | β | AEC-Q101 (per datasheets.com parametric record) |
| Lead-Free | β | Yes |