BSP125H6327XTSA1 vs BSP135H6906XTSA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci BSP125H6327XTSA1 disebabkan oleh Infineon dan BSP135H6906XTSA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | BSP125H6327XTSA1 | BSP135H6906XTSA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Part Number | BSP125H6327XTSA1 | — |
| Jenis Transistor | N-Channel MOSFET | — |
| Technology | SIPMOS (Small Signal Power MOSFET) | SIPMOS (planar high-voltage) |
| Drain-Source Voltage (VDS) | 600 V | — |
| Continuous Drain Current (ID) | 120 mA (Ta) | — |
| Power Dissipation (PD) | 1.8 W (Ta) | — |
| Kemasan | PG-SOT223-4 (SOT-223-3 + tab) | PG-SOT223-4 (SOT-223, 3+tab) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Suhu Operasi | -55C to +150C (TJ) | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | — |
| On-Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) at VGS=10V] | — |
| Configuration | Single | — |
| Channel Mode | Enhancement | — |
| Status RoHS | Compliant | Compliant |
| Aras MSL | 1 (Unlimited) | 1 (unlimited) |
| Qualification | Automotive / Industrial grade | — |
| FET Type | — | N-Channel Depletion Mode |
| Drain-Source Voltage (VDS) Max | — | 600 V |
| Continuous Drain Current (ID) at TA=25C | — | 120 mA |
| RDS(on) Max at VGS=0V | — | 45 Ohm |
| Power Dissipation (PD) Max | — | 1.8 W |
| Gate-Source Voltage (VGS) Max | — | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(off)) | — | Depletion mode (normally-on) |
| Gambaran Suhu Operasi | — | -55C to +150C |
| Kiraan Pin | — | 4 (3 leads + drain tab) |
| Automotive Qualification | — | AEC-Q101 (per datasheets.com parametric record) |
| Lead-Free | — | Yes |