BSP316PH6327XTSA1 vs BSL308PEH6327XTSA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng BSP316PH6327XTSA1 sa pamamagitan ng Infineon at BSL308PEH6327XTSA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
BSP316PH6327XTSA1 - P-Ch 100V 680mA MOSFET | Infineon | SOT-223
BSP316PH6327XTSA1 ✓ Nakahanda
Pagsanggunian na paghahambing
| Parametro | BSP316PH6327XTSA1 | BSL308PEH6327XTSA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| FET Type | P-Channel | 2x P-Channel (Dual) |
| Drain-to-Source Voltage (VDS) | -100 V | — |
| Continuous Drain Current (ID) at TA=25C | -680 mA | — |
| Total Power Dissipation (Ptot) at TA=25C | 1.8 W | — |
| On-Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) at VGS=-10V] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | [DATA_NEEDED: VGS(th) typical value] |
| Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | — |
| Packhaging | PG-SOT223-4 (TO-261-4) | PG-TSOP6-6 (TSOT-23-6) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Hanay ng Temperature na Operasyon | -55 C to +150 C (junction) | — |
| Bilang ng Pins | 3 + thermal tab | 6 |
| Channel Mode | Enhancement | Enhancement |
| Technology | SIPMOS (P-channel MOSFET) | — |
| Tindminan RoHS | Compliant | Compliant |
| Level ng MSL | 1 | — |
| Packaging | Tape & Reel (H6327 suffix) | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS |
| Drain-Source Voltage (VDS) | — | -30 V |
| Continuous Drain Current (ID) | — | -2 A (Ta) |
| Power Dissipation (PD) | — | 500 mW (Ta) |
| Configuration | — | Dual, common source |
| Temperature na Operasyon | — | -55 C to +150 C (TJ) |
| Automotive Qualification | — | AEC-Q101 |
| On-State Resistance (RDS(on)) | — | [DATA_NEEDED: RDS(on) at VGS=10V / 4.5V] |