BSS169H6327XTSA1 vs BSP88H6327XTSA1 Comparison
Detailed side-by-side comparison of BSS169H6327XTSA1 by Infineon and BSP88H6327XTSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | BSS169H6327XTSA1 | BSP88H6327XTSA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| FET Type | N-Channel Depletion Mode | — |
| Drain-to-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) | 170 mA (Ta) | 350 mA at Ta=25 C |
| Power Dissipation (PD) | 360 mW (Ta) | 1.8 W at Ta=25 C |
| RDS(on) Maximum | 6 Ohm at VGS=0 V | — |
| Gate-Source Voltage (VGS) Max | [DATA_NEEDED: VGS absolute maximum rating] | — |
| Gate Threshold Voltage (VGS(th)) | Pinch-off approx. -3.5 V (typical) | [DATA_NEEDED: VGS(th) min/typ/max] |
| Operating Temperature Range | [DATA_NEEDED: junction/ambient operating temperature range] | — |
| Package | PG-SOT23 (SOT-23-3) | PG-SOT223-4 (SOT-223-3) |
| Mounting Type | Surface Mount | Surface Mount |
| Pin Count | 3 | — |
| MSL Level | 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL level] |
| RoHS Status | Compliant | — |
| Lead-Free | Yes | — |
| Technology | Depletion-mode vertical DMOS | SIPMOS (planar enhancement mode) |
| Drain Current at 25C | 170 mA continuous | — |
| Typical RDS(on) | [DATA_NEEDED: typical RDS(on) value] | — |
| Transistor Type | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 240 V |
| On-State Resistance (RDS(on)) | — | 6 ohm typical at VGS=10 V |
| Configuration | — | Single |
| Operating Temperature | — | -55 C to +150 C |
| Automotive Qualification | — | AEC-Q101 qualified |
| Lead Plating | — | Pb-free |
| RoHS Compliance | — | Compliant |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss] |
| Drain Tab Connection | — | SOT-223 tab is drain |